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PDF WTL2622 Data sheet ( Hoja de datos )
| Número de pieza | WTL2622 | |
| Descripción | Dual N-Channel Enhancement Mode MOSFET | |
| Fabricantes | Weitron Technology | |
| Logotipo |  |
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Dual N-Channel Enhancement
Mode MOSFET
P b Lead(Pb)-Free
6 DRAIN
Features:
*Super High Dense Cell Design For Low RDS(ON)
RDS(ON) < 80mΩ@VGS=4.5V
*Rugged and Reliable
*Capable of 2.5V Gate Drive
*Simple Drive Requirement
*SOT-26 Package
1 GATE
2 SOURCE
4 DRAIN
3 GATE
5 SOURCE
WTL2622
DRAIN CURRENT
2.5 AMPERES
DRAIN SOURCE VOLTAGE
20 VOLTAGE
6
5
4
1
2
3
SOT-26
Maximum Ratings (TA=25˚C Unless Otherwise Specified)
Rating
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
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Continuous Drain Current1, VGS@4.5V, TA=25˚C
-Pulsed2
VGS
ID
IDM
Drain-Source Diode Forward Current1
IS
Total Power Dissipation1 (TA=25˚C)
Maximum Junction-ambient1
PD
RθJA
Operating Junction and Storage Temperature Range
TJ,Tstg
Value
20
±10
2.5
8
1.25
1
125
-55~+150
Unit
V
A
W
˚C/W
˚C
Device Marking
WTL2622=STS2622
WEITRON
http:www.weitron.com.tw
1/6
19-Sep-05
1 page  
WTL2622
12
10
8
6
4
2
VDS=5V
0
0 3 6 9 12 15
IDS, Drain-Source Current (A)
Fig.7 Transconductance Variation
with Drain Current
5
VDS=4.5V
4 ID=2.5A
3
2
1
0
0
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0.7 1.4 2.1 2.8 3.5 4.2 4.9 5.6
Qg, Total Gate Charge (nC)
Fig.9 Gate Charge
V DD
V IN R L
D V OUT
VGS
R GEN
G
S
Fig.11 Switching Test Circuit
20
10
1
TJ=25˚C
0
0.4 0.8 1.2 1.6 2.0 2.4
VSD, Body Diode Forward Voltage (V)
Fig.8 Body Diode Forward Voltage
Variation with Source Current
50
10 RDS(ON) Limit
1
10ms
100ms
1s
DC
0.1 VGS=4.5V
Single Pulse
Tc=25˚C
0.03
0.1 1
10 20 50
VDS, Drain-Source Voltage (V)
Fig.10 Maximum Safe Operating Area
td(on)
V OUT
ton
tr
td(off )
90%
10% INVERTED
toff
90%
tf
10%
VIN
10%
90%
50% 50%
PULSE WIDTH
Fig.12 Switching Waveforms
WEITRON
http://www.weitron.com.tw
5/6
19-Sep-05
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet WTL2622.PDF ] | |
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