DataSheet.es    


PDF NESG3032M14 Data sheet ( Hoja de datos )

Número de pieza NESG3032M14
Descripción NPN SILICON GERMANIUM RF TRANSISTOR
Fabricantes California Eastern Labs 
Logotipo California Eastern Labs Logotipo



Hay una vista previa y un enlace de descarga de NESG3032M14 (archivo pdf) en la parte inferior de esta página.


Total 6 Páginas

No Preview Available ! NESG3032M14 Hoja de datos, Descripción, Manual

NPN SILICON GERMANIUM RF TRANSISTOR
NESG3032M14
NPN SiGe RF TRANSISTOR FOR
LOW NOISE, HIGH-GAIN AMPLIFICATION
4-PIN LEAD-LESS MINIMOLD (M14, 1208 PACKAGE)
FEATURES
• The device is an ideal choice for low noise, high-gain amplification
NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz
• Maximum stable power gain: MSG = 20.5 dB TYP. @ VCE = 2 V, IC = 15 mA, f = 2.0 GHz
• SiGe HBT technology (UHS3) adopted: fmax = 110 GHz
• 4-pin lead-less minimold (M14, 1208 package)
ORDERING INFORMATION
Part Number
Order Number
Package
Quantity
Supplying Form
NESG3032M14 NESG3032M14-A
NESG3032M14-T3 NESG3032M14-T3-A
4-pin lead-less minimold
(M14, 1208 package)
(Pb-Free)
50 pcs
(Non reel)
10 kpcs/reel
• 8 mm wide embossed taping
• Pin 1 (Collector), Pin 4 (Emitter) face the
perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
www.DataSheet4U.com
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Ptot Note
Tj
Tstg
Ratings
12.0
4.3
1.5
35
150
150
65 to +150
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PWB
Unit
V
V
V
mA
mW
°C
°C
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
Document No. PU10575EJ01V0DS (1st edition)
Date Published July 2005 CP(K)
© NEC Compound Semiconductor Devices, Ltd. 2005

1 page




NESG3032M14 pdf
NESG3032M14
www.DataSheet4U.com
For further information, please contact
NEC Compound Semiconductor Devices, Ltd. http://www.ncsd.necel.com/
E-mail: [email protected] (sales and general)
[email protected] (technical)
Sales Division TEL: +81-44-435-1573 FAX: +81-44-435-1579
NEC Compound Semiconductor Devices Hong Kong Limited
E-mail: [email protected] (sales, technical and general)
Hong Kong Head Office TEL: +852-3107-7303 FAX: +852-3107-7309
Taipei Branch Office
TEL: +886-2-8712-0478 FAX: +886-2-2545-3859
Korea Branch Office
TEL: +82-2-558-2120 FAX: +82-2-558-5209
NEC Electronics (Europe) GmbH http://www.ee.nec.de/
TEL: +49-211-6503-0 FAX: +49-211-6503-1327
California Eastern Laboratories, Inc. http://www.cel.com/
TEL: +1-408-988-3500 FAX: +1-408-988-0279
0504

5 Page










PáginasTotal 6 Páginas
PDF Descargar[ Datasheet NESG3032M14.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
NESG3032M14NPN SILICON GERMANIUM RF TRANSISTORCalifornia Eastern Labs
California Eastern Labs

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar