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Número de pieza | NESG3032M14 | |
Descripción | NPN SILICON GERMANIUM RF TRANSISTOR | |
Fabricantes | California Eastern Labs | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de NESG3032M14 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! NPN SILICON GERMANIUM RF TRANSISTOR
NESG3032M14
NPN SiGe RF TRANSISTOR FOR
LOW NOISE, HIGH-GAIN AMPLIFICATION
4-PIN LEAD-LESS MINIMOLD (M14, 1208 PACKAGE)
FEATURES
• The device is an ideal choice for low noise, high-gain amplification
NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz
• Maximum stable power gain: MSG = 20.5 dB TYP. @ VCE = 2 V, IC = 15 mA, f = 2.0 GHz
• SiGe HBT technology (UHS3) adopted: fmax = 110 GHz
• 4-pin lead-less minimold (M14, 1208 package)
ORDERING INFORMATION
Part Number
Order Number
Package
Quantity
Supplying Form
NESG3032M14 NESG3032M14-A
NESG3032M14-T3 NESG3032M14-T3-A
4-pin lead-less minimold
(M14, 1208 package)
(Pb-Free)
50 pcs
(Non reel)
10 kpcs/reel
• 8 mm wide embossed taping
• Pin 1 (Collector), Pin 4 (Emitter) face the
perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
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Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Ptot Note
Tj
Tstg
Ratings
12.0
4.3
1.5
35
150
150
−65 to +150
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PWB
Unit
V
V
V
mA
mW
°C
°C
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
Document No. PU10575EJ01V0DS (1st edition)
Date Published July 2005 CP(K)
© NEC Compound Semiconductor Devices, Ltd. 2005
1 page NESG3032M14
www.DataSheet4U.com
For further information, please contact
NEC Compound Semiconductor Devices, Ltd. http://www.ncsd.necel.com/
E-mail: [email protected] (sales and general)
[email protected] (technical)
Sales Division TEL: +81-44-435-1573 FAX: +81-44-435-1579
NEC Compound Semiconductor Devices Hong Kong Limited
E-mail: [email protected] (sales, technical and general)
Hong Kong Head Office TEL: +852-3107-7303 FAX: +852-3107-7309
Taipei Branch Office
TEL: +886-2-8712-0478 FAX: +886-2-2545-3859
Korea Branch Office
TEL: +82-2-558-2120 FAX: +82-2-558-5209
NEC Electronics (Europe) GmbH http://www.ee.nec.de/
TEL: +49-211-6503-0 FAX: +49-211-6503-1327
California Eastern Laboratories, Inc. http://www.cel.com/
TEL: +1-408-988-3500 FAX: +1-408-988-0279
0504
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet NESG3032M14.PDF ] |
Número de pieza | Descripción | Fabricantes |
NESG3032M14 | NPN SILICON GERMANIUM RF TRANSISTOR | California Eastern Labs |
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