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PDF FGPF50N30T Data sheet ( Hoja de datos )
| Número de pieza | FGPF50N30T | |
| Descripción | 50A PDP IGBT | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FGPF50N30T
300V, 50A PDP IGBT
Features
• High current capability
• Low saturation voltage: VCE(sat) =1.4V @ IC = 30A
• High input impedance
• Fast switching
• RoHS compliant
Applications
• PDP System
January 2008
tm
General Description
Using Novel Trench IGBT Technology, Fairchild’s new sesries of
trench IGBTs offer the optimum performance for PDP applica-
tions where low conduction and switching losses are essential.
C
TO-220F
1
1.Gate 2.Collector 3.Emitter
Absolute Maximum Ratings
Symbol
VCES
www.DataSVhGeEeSt4U.com
ICM (1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Notes:
1: Repetitive test , Pulse width=100usec , Duty=0.1
* IC_pluse limited by max Tj
G
E
Ratings
300
± 30
120
46.8
18.7
-55 to +150
-55 to +150
300
Typ.
-
-
Max.
2.67
62.5
Units
V
V
A
W
W
oC
oC
oC
Units
oC/W
oC/W
©2008 Fairchild Semiconductor Corporation
FGPF50N30T Rev. A
1
www.fairchildsemi.com
1 page  
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Collector Current
1000
Common Emitter
VGE = 15V, RG = 15Ω
TC = 25oC
TC = 125oC
100 tr
td(on)
10
10
20 30 40
Collector Current, IC [A]
50
Figure 15. Switching Loss vs. Gate Resistance
2000
1000
Common Emitter
VCC = 200V, VGE = 15V
IC = 30A
TC = 25oC
TC = 125oC
Eoff
Figure 14. Turn-off Characteristics vs.
Collector Current
500
Common Emitter
VGE = 15V, RG = 15Ω
TC = 25oC
TC = 125oC
tf
td(off)
100
10
20 30 40
Collector Current, IC [A]
50
Figure 16. Switching Loss vs.Gate Resistance
3000
1000
Common Emitter
VGE = 15V, RG = 15Ω
TC = 25oC
TC = 125oC
Eoff
Eon Eon
100
100
www.DataSheet4U.0com
20 40 60 80
Gate Resistance, RG [Ω]
100
Figure 17.Transient Thermal Impedance of IGBT
30
10
20 30 40
Collector Current, IC [A]
10
1 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
single pulse
1E-3
1E-5
1E-4
PDM
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-3
0.01
0.1
1
Rectangular Pulse Duration [sec]
10 100
50
FGPF50N30T Rev. A
5
www.fairchildsemi.com
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FGPF50N30T.PDF ] | |
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