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Numéro de référence | 5SMX12M3300 | ||
Description | IGBT-Die | ||
Fabricant | ABB | ||
Logo | |||
VCE =
IC =
3300 V
50 A
IGBT-Die
5SMX 12M3300
Die size: 13.6 x 13.6 mm
• Low loss, rugged SPT technology
• Smooth switching for good EMC
• Large bondable emitter area
• Passivation: SIPOS and Silicon Nitride plus Polyimide
Maximum rated values 1)
Parameter
Symbol Conditions
Collector-emitter voltage
VCES VGE = 0 V
DC collector current
IC
Peak collector current
ICM Limited by Tvjmax
Gate-emitter voltage
VGES
IGBT short circuit SOA
tpsc
VCC = 2500 V, VCEM ≤ 3300 V
VGE ≤ 15 V, Tvj ≤ 125 °C
Junction temperature
Tvj
www1.)DMaataxSimhuemetr4aUte.dcvoamlues indicate limits beyond which damage to the device may occur per IEC 60747 - 9
Doc. No. 5SYA1621-02 Sep 05
min max Unit
3300 V
50 A
100 A
-20 20 V
10 µs
-40 125 °C
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
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Pages | Pages 5 | ||
Télécharger | [ 5SMX12M3300 ] |
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