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5SMX12L2511 fiches techniques PDF

ABB - IGBT-Die

Numéro de référence 5SMX12L2511
Description IGBT-Die
Fabricant ABB 
Logo ABB 





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5SMX12L2511 fiche technique
VCE =
IC =
2500 V
54 A
IGBT-Die
5SMX 12L2511
Die size: 12.4 x 12.4 mm
Low loss, rugged SPT technology
Smooth switching for good EMC
Emitter metallisation optimized for press-pack packaging
Passivation: SIPOS and Silicon Nitride
Maximum rated values 1)
Parameter
Symbol Conditions
Collector-emitter voltage
VCES VGE = 0 V
DC collector current
IC
Peak collector current
ICM Limited by Tvjmax
Gate-emitter voltage
VGES
IGBT short circuit SOA
tpsc
VCC = 2000 V, VCEM 2500 V
VGE 15 V, Tvj 125 °C
www.DJautnacSthioenet4teUm.cpomerature
Tvj
1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9
Doc. No. 5SYA1640-00 Mar 07
min max Unit
2500 V
54 A
108 A
-20 20 V
10 µs
-40 125 °C
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

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