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Numéro de référence | 5SMX12K1701 | ||
Description | IGBT-Die | ||
Fabricant | ABB | ||
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Doc. No. 5SYA1619-01 July 03
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Collector-emitter voltage
DC collector current
Peak collector current
Gate-emitter voltage
IGBT short circuit SOA
www.DJautanSchteioent4Ute.mcopmerature
VCES
IC
ICM
VGES
tpsc
Tvj
VGE = 0 V, Tvj ≥ 25 °C
Limited by Tvjmax
VCC = 1300 V, VCEM ≤ 1700 V
VGE ≤ 15 V, Tvj ≤ 125 °C
1) Maximum rated values indicate limits beyond which damage to the device may occur
PLQ PD[ 8QLW
1700 V
75 A
150 A
-20 20 V
10 µs
-40 150 °C
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Pages | Pages 5 | ||
Télécharger | [ 5SMX12K1701 ] |
No | Description détaillée | Fabricant |
5SMX12K1701 | IGBT-Die | ABB |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |