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PDF NX3L1T66 Data sheet ( Hoja de datos )
| Número de pieza | NX3L1T66 | |
| Descripción | Low-ohmic Single-pole Single-throw Analog Switch | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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NX3L1T66
Low-ohmic single-pole single-throw analog switch
Rev. 01 — 14 September 2009
Product data sheet
1. General description
The NX3L1T66 provides one single-pole single-throw analog switch function. It has two
input/output terminals (Y and Z) and an active HIGH enable input pin (E). When E is LOW,
the analog switch is turned off.
Schmitt-trigger action at the enable input (E) makes the circuit tolerant to slower input rise
and fall times across the entire VCC range from 1.4 V to 4.3 V.
A low input voltage threshold allows pin E to be driven by lower level logic signals without
a significant increase in supply current ICC. This makes it possible for the NX3L1T66 to
switch 4.3 V signals with a 1.8 V digital controller, eliminating the need for logic level
translation.
The NX3L1T66 allows signals with amplitude up to VCC to be transmitted from nY to nZ; or
from nZ to nY. Its low ON resistance (0.5 Ω) and flatness (0.13 Ω) ensures minimal
attenuation and distortion of transmitted signals.
2. Features
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I Wide supply voltage range from 1.4 V to 4.3 V
I Very low ON resistance (peak):
N 1.6 Ω (typical) at VCC = 1.4 V
N 1.0 Ω (typical) at VCC = 1.65 V
N 0.55 Ω (typical) at VCC = 2.3 V
N 0.50 Ω (typical) at VCC = 2.7 V
N 0.50 Ω (typical) at VCC = 4.3 V
I High noise immunity
I ESD protection:
N HBM JESD22-A114E Class 3A exceeds 7500 V
N MM JESD22-A115-A exceeds 200 V
N CDM AEC-Q100-011 revision B exceeds 1000 V
I CMOS low-power consumption
I Latch-up performance exceeds 100 mA per JESD 78 Class II Level A
I 1.8 V control logic at VCC = 3.6 V
I Control input accepts voltages above supply voltage
I Very low supply current, even when input is below VCC
I High current handling capability (350 mA continuous current under 3.3 V supply)
I Specified from −40 °C to +85 °C and from −40 °C to +125 °C
1 page  
NXP Semiconductors
NX3L1T66
Low-ohmic single-pole single-throw analog switch
11. Static characteristics
Table 7. Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground 0 V).
Symbol Parameter Conditions
25 °C
Min Typ Max
VIH HIGH-level VCC = 1.4 V to 1.6 V
input voltage VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 2.7 V to 3.6 V
VCC = 3.6 V to 4.3 V
VIL
LOW-level
VCC = 1.4 V to 1.6 V
input voltage VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 2.7 V to 3.6 V
VCC = 3.6 V to 4.3 V
II input leakage enable input E;
current
VI = GND to 4.3 V;
VCC = 1.4 V to 4.3 V
IS(OFF)
OFF-state
leakage
current
Y port; see Figure 5
VCC = 1.4 V to 3.6 V
VCC = 3.6 V to 4.3 V
IS(ON)
ON-state
leakage
current
ICC supply current
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Z port; see Figure 6
VCC = 1.4 V to 3.6 V
VCC = 3.6 V to 4.3 V
VI = VCC or GND;
VSW = GND or VCC
VCC = 3.6 V
∆ICC
additional
supply current
VCC = 4.3 V
VSW = GND or VCC
VI = 2.6 V; VCC = 4.3 V
VI = 2.6 V; VCC = 3.6 V
VI = 1.8 V; VCC = 4.3 V
VI = 1.8 V; VCC = 3.6 V
VI = 1.8 V; VCC = 2.5 V
CI input
capacitance
CS(OFF) OFF-state
capacitance
CS(ON) ON-state
capacitance
0.9 -
-
0.9 -
-
1.1 -
-
1.3 -
-
1.4 -
-
- - 0.3
- - 0.4
- - 0.4
- - 0.5
- - 0.6
---
- - ±5
- - ±10
- - ±5
- - ±10
- - 100
- - 150
- 2.0 4.0
- 0.35 0.7
- 7.0 10.0
- 2.5 4.0
- 50 200
- 1.0 -
- 35 -
- 110 -
−40 °C to +125 °C
Unit
Min Max Max
(85 °C) (125 °C)
0.9 -
-V
0.9 -
-V
1.1 -
-V
1.3 -
-V
1.4 -
-V
- 0.3 0.3 V
- 0.4 0.3 V
- 0.4 0.4 V
- 0.5 0.5 V
- 0.6 0.6 V
- ±0.5 ±1 µA
- ±50 ±500 nA
- ±50 ±500 nA
- ±50 ±500 nA
- ±50 ±500 nA
- 690 6000 nA
- 800 7000 nA
- 7 7 µA
- 1 1 µA
- 15 15 µA
- 5 5 µA
- 300 500 nA
- - - pF
- - - pF
- - - pF
NX3L1T66_1
Product data sheet
Rev. 01 — 14 September 2009
© NXP B.V. 2009. All rights reserved.
5 of 19
5 Page 
NXP Semiconductors
NX3L1T66
Low-ohmic single-pole single-throw analog switch
12.2 Additional dynamic characteristics
Table 12. Additional dynamic characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); VI = GND or VCC (unless otherwise
specified); tr = tf ≤ 2.5 ns.
Symbol Parameter
Conditions
25 °C
Unit
Min Typ Max
THD
total harmonic
distortion
fi = 20 Hz to 20 kHz; RL = 32 Ω; see Figure 17
VCC = 1.4 V; VI = 1 V (p-p)
[1]
- 0.15 -
%
VCC = 1.65 V; VI = 1.2 V (p-p)
VCC = 2.3 V; VI = 1.5 V (p-p)
- 0.10 -
- 0.02 -
%
%
VCC = 2.7 V; VI = 2 V (p-p)
- 0.02 -
%
f(−3dB)
αiso
Vct
−3 dB frequency
response
isolation (OFF-state)
crosstalk voltage
VCC = 4.3 V; VI = 2 V (p-p)
RL = 50 Ω; see Figure 18
VCC = 1.4 V to 4.3 V
fi = 100 kHz; RL = 50 Ω; see Figure 19
VCC = 1.4 V to 4.3 V
between digital inputs and switch;
fi = 1 MHz; CL = 50 pF; RL = 50 Ω; see Figure 20
-
[1]
-
[1]
-
0.02
60
−90
-%
- MHz
- dB
VCC = 1.4 V to 3.6 V
- 0.2 - V
Qinj charge injection
VCC = 3.6 V to 4.3 V
fi = 1 MHz; CL = 0.1 nF; RL = 1 MΩ; Vgen = 0 V;
Rgen = 0 Ω; see Figure 21
VCC = 1.5 V
- 0.2 - V
- 3 - pC
VCC = 1.8 V
- 3 - pC
VCC = 2.5 V
- 3 - pC
VCC = 3.3 V
- 3 - pC
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VCC = 4.3 V
- 6 - pC
[1] fi is biased at 0.5VCC.
NX3L1T66_1
Product data sheet
Rev. 01 — 14 September 2009
© NXP B.V. 2009. All rights reserved.
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