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Taiwan Semiconductor Company - (HERA801G - HERA808G) Glass Passivated High Efficient Rectifiers

Numéro de référence HERA807G
Description (HERA801G - HERA808G) Glass Passivated High Efficient Rectifiers
Fabricant Taiwan Semiconductor Company 
Logo Taiwan Semiconductor Company 





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HERA807G fiche technique
HERA801G THRU HERA808G
Features
8.0 AMPS. Glass Passivated High Efficient Rectifiers
Voltage Range
50 to 1000 Volts
Current
8.0 Amperes
TO-220A
Low forward voltage drop
High current capability
High reliability
High surge current capability
Mechanical Data
Cases: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Terminals: Leads solderable per
MIL-STD-202, Method 208 guaranteed
Polarity: As marked
High temperature soldering guaranteed:
260oC/10 seconds .16”,(4.06mm) from
case.
Weight: 2.24 grams
.113(2.87)
.103(2.62)
.412(10.5)
MAX
DIA
.154(3.91)
.148(3.74)
.27(6.86)
.23(5.84)
.594(15.1)
.587(14.9)
.185(4.70)
.175(4.44)
.055(1.40)
.045(1.14)
.16(4.06)
.14(3.56)
PIN1
2
.037(0.94)
.027(0.68)
.56(14.22)
.53(13.46)
.11(2.79)
.10(2.54)
.205(5.20)
.195(4.95)
.025(0.64)
.014(0.35)
PIN 1
PIN 2
CASE
Case Positive
Dimensions in inches and (millimeters)
Maximum Rating and Electrical Characteristics
Rating at 25ambient temperature unless otherwise specified.
Single phase, half wave 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol HERA HERA HERA HERA HERA HERA HERA HERA Units
801G 802G 803G 804G 805G 806G 807G 808G
Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 300 400 600 800 1000 V
www.DataMSahxeimetu4mU.RcoMmS Voltage
VRMS 35 70 140 210 280 420 560 700 V
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current .375”(9.5mm) Lead Length
@TC =100
VDC 50 100 200 300 400 600 800 1000 V
I(AV) 8.0 A
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
IFSM
150
A
Maximum Instantaneous Forward Voltage
@8.0A
VF
1.0
1.3 1.7
V
Maximum DC Reverse Current
@ TA=25at Rated DC Blocking Voltage
@ TA=125
IR
10.0
400
uA
uA
Maximum Reverse Recovery Time (Note 1) Trr
50
80 nS
Typical Junction Capacitance (Note 2)
Cj
65
55 pF
Typical Thermal Resistance (Note 3)
RθJC
2.0 /W
Operating Temperature Range
TJ
-65 to +150
Storage Temperature Range
TSTG
-65 to +150
Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plate.
- 342 -

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