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Hamamatsu Photonic Systems - Si-based Photodiodes

Numéro de référence S4402
Description Si-based Photodiodes
Fabricant Hamamatsu Photonic Systems 
Logo Hamamatsu Photonic Systems 





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S4402 fiche technique
PHOTODIODE
Si APD
S4402
φ1 mm quadrant APD
Features
l Uniform element characteristics
Quadrant format on one chip with φ1 mm active area
ensures uniform characteristics between elements.
l Single power supply operation
Allows easy and simple operation.
Applications
l Low-light-level detection
l Laser beam positioning
s General ratings
Parameter
Window material
Active area size
Effective active area
Symbol
-
A
-
s Absolute maximum ratings
Parameter
Operating temperature
www.DSatotarSagheette4mU.pcoemrature
Symbol
Topr
Tstg
s Electrical and optical characteristics (Ta=25 °C)
Parameter
Symbol
Condition
Spectral response range
λ
Peak sensitivity wavelength
λp M=100
Photo sensitivity
S λ=800 nm, M=1
Quantum efficiency
QE λ=800 nm, M=1
Breakdown voltage
VBR IR=100 µA
Temperature coefficient of VBR
-
Dark current
ID M=100
Cut-off frequency
fc
M=100, λ=800 nm
RL=50 , -3 dB
Terminal capacitance
Ct M=100, f=1 MHz
Excess noise figure
x
M=50, f=10 kHz
Io=10 nA
Value
Borosilicate glass
φ1 mm/4
0.17 (per 1 element)
Value
-20 to +60
-55 to +100
Min. Typ.
- 400 to 1000
- 800
- 0.5
- 75
- 150
0.65
- 0.4
- 310
-8
- 0.35
Max.
-
-
-
-
200
-
2.0
-
-
-
Unit
-
mm
mm2
Unit
°C
°C
Unit
nm
nm
A/W
%
V
V/°C
nA
MHz
pF
-

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