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Datasheet WFD2N60-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
WFD Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | WFD20N06 | Silicon N-Channel MOSFET WFD20N06
Silicon N-Channel MOSFET
Features
■ 20A,60V, RDS(on)(Max 39mΩ)@VGS=10V ■ Ultra-low Gate Charge(Typical 6.1nC) ■ High Current Capability ■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
General Description
This Power MO S FET is produced using Win se m i ’s  Winsemi mosfet | | |
| 2 | WFD2N60 | N-Channel MOSFET Wisdom Semiconductor
WFD/U2N60
N-Channel MOSFET
Features
■ ■ ■ ■ ■
RDS(on) (Max 5.0 Ω )@VGS=10V Gate Charge (Typical 9.5nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C)
Symbol
◀
{
2. Drain
●
1. Gate {
▲
● �  Wisdom technologies mosfet | | |
| 3 | WFD2N60B | Silicon N-Channel MOSFET WFD2N60B Product Description
Silicon N-Channel MOSFET
Features
� 2A,600V,RDS(on)(Max 5.0Ω)@VGS=10V � Ultra-low Gate Charge(Typical 5.3nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced us Winsemi mosfet | | |
| 4 | WFD430 | N-Channel MOSFET Wisdom Semiconductor
WFD430/WFU430
N-Channel MOSFET
Features
■ ■ ■ ■ ■
RDS(on) (Max 1.4 Ω )@VGS=10V Gate Charge (Typical 25nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C)
Symbol
◀
{
2. Drain
●
1. Gate {
▲
● Wisdom technologies mosfet | | |
| 5 | WFD4N60 | N-Channel MOSFET HIGH VOLTAGE N-Channel MOSFET
WFU4N60/WFD4N60
600V N-Channel MOSFET
Features
□ Low Intrinsic Capacitances □ Excellent Switching Characteristics □ Extended Safe Operating Area □ Unrivalled Gate Charge : 15 nC (Typ.) □ BVDSS=600V,ID=4A □ Lower RDS(on) : 2.5Ω (Max) @VG=10V Wisdom technologies mosfet | | |
| 6 | WFD4N60 | Power MOSFET, Transistor WFD4N60
Silicon N-Channel MOSFET
Features
■ 4A,600V.RDS(on)(Max 2.5Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 16nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Isolation Voltage ( VISO = 4000V AC ) ■ Maximum Junction Temperature Range(150℃)
General Description
This Power MOSF Winsemi mosfet | | |
| 7 | WFD4N60B | Power MOSFET, Transistor WFD4N60B
Silicon N-Channel MOSFET
Features
■ 4A,600V.RDS(on)(Max 2.4Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 16nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Isolation Voltage ( VISO = 4000V AC ) ■ Maximum Junction Temperature Range(150℃)
General Description
This Power MOS Winsemi mosfet | |
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