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PDF MA2SD25 Data sheet ( Hoja de datos )
| Número de pieza | MA2SD25 | |
| Descripción | Silicon epitaxial planar type | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Schottky Barrier Diodes (SBD)
MA2SD25
Silicon epitaxial planar type
For super high speed switching
I Features
• IF(AV) = 200 mA rectification is possible
• SS-Mini type 2-pin package
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage (DC)
Repetitive peak reverse-voltage
Peak forward current
Average forward current
Non-repetitive peak forward-
surge-current *
VR
VRRM
IFM
IF(AV)
IFSM
15
15
300
200
1
V
V
mA
mA
A
Junction temperature
Tj 125 °C
Storage temperature
Tstg −55 to +125
°C
Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
0.80+–00..0035
1
Unit: mm
0.60+–00..0035
0.12+–00..0025
0.01±0.01
2
0.30±0.05
5°
0+–00.05
1 : Anode
2 : Cathode
EIAJ : SC-79
SSMini2-F1 Package
Marking Symbol: 6L
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
www.DataSheet4U.com
Terminal capacitance
Reverse recovery time *
IR VR = 6 V
VF IF = 200 mA
Ct VR = 1 V, f = 1 MHz
trr IF = IR = 100 mA
Irr = 10 mA, RL = 100 Ω
50
0.39
20
3
µA
V
pF
ns
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 250 MHz
3. *: trr measuring instrument
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
Input Pulse
tr tp
10%
t
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
IF
trr
t
Irr = 10 mA
IF = 100 mA
IR = 100 mA
RL = 100 Ω
Publication date: August 2001
SKH00029AED
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet MA2SD25.PDF ] | |
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