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Datasheet IXZ2210N50L-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
IXZ Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | IXZ12210N50L | RF Power MOSFET IXZ12210N50L
RF Power MOSFET
N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications
Note: All data is per the IXZ1210N50L single ended device unless otherwise Symbol VDSS  IXYS Corporation mosfet | | |
| 2 | IXZ210N50L | (IXZ210N50L / IXZ2210N50L) N-Channel Enhancement Mode Linear 175MHz RF MOSFET IXZ210N50L & IXZ2210N50L
RF Power MOSFET
N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications
Note: All data is per the IXZ210N50L single ended device unless otherwise IXYS Corporation mosfet | | |
| 3 | IXZ2210N50L | (IXZ210N50L / IXZ2210N50L) N-Channel Enhancement Mode Linear 175MHz RF MOSFET IXZ210N50L & IXZ2210N50L
RF Power MOSFET
N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications
Note: All data is per the IXZ210N50L single ended device unless otherwise IXYS Corporation mosfet | | |
| 4 | IXZ308N120 | Z-MOS RF Power MOSFET IXZ308N120
Z-MOS RF Power MOSFET
N-Channel Enhancement Mode Linear Switch 175MHz Mode RF RF MOSFET MOSFET Lo Capacitance Low Capacitance Z-MOS Z-MOS MOSFET MOSFET Process Process TMTM Optimized for RF Linear Operation Operation Ideal for Class AB C, D, & C, &E Broadcast Applications & Communications IXYS Corporation mosfet | | |
| 5 | IXZ316N60 | 600V (max) Switch Mode MOSFETS IXZ316N60
Z-MOS RF Power MOSFET
N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = IXYS Corporation mosfet | | |
| 6 | IXZ318N50 | 500V (max) Switch Mode MOSFETS IXZ318N50
Z-MOS RF Power MOSFET
N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = IXYS Corporation mosfet | | |
| 7 | IXZ4DF12N100 | RF Power MOSFET & DRIVER www.DataSheet.co.kr
IXZ4DF12N100
RF Power MOSFET & DRIVER
Driver / MOSFET Combination DEIC-515 Driver combined with a DE375-102N12A MOSFET Gate driver matched to MOSFET
Features • Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and p IXYS Corporation mosfet | |
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