DataSheet.es    


PDF IXZ210N50L Data sheet ( Hoja de datos )

Número de pieza IXZ210N50L
Descripción (IXZ210N50L / IXZ2210N50L) N-Channel Enhancement Mode Linear 175MHz RF MOSFET
Fabricantes IXYS Corporation 
Logotipo IXYS Corporation Logotipo



Hay una vista previa y un enlace de descarga de IXZ210N50L (archivo pdf) en la parte inferior de esta página.


Total 9 Páginas

No Preview Available ! IXZ210N50L Hoja de datos, Descripción, Manual

IXZ210N50L & IXZ2210N50L
RF Power MOSFET
N-Channel Enhancement Mode Linear 175MHz RF MOSFET
Low Capacitance Z-MOSTM MOSFET Process
Optimized for Linear Operation
Ideal for Class AB & C, Broadcast & Communications Applications
Note: All data is per the IXZ210N50L single ended device unless otherwise noted.
Symbol Test Conditions
Maximum Ratings
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
dv/dt
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuous
Transient
Tc = 25°C
Tc = 25°C, pulse width limited by
TJM
Tc = 25°C
Tc = 25°C
IS IDM, di/dt 100A/µs, VDD
VDSS,
Tj 150°C, RG = 0.2
IS = 0
500
500
±20
±30
10
60
16
TBD
5
>200
V
V
V
V
A
A
A
mJ
V/ns
V/ns
VDSS
ID25
= 500 V
= 10 A
150V (operating)
300 & 550 Watts
175MHz
IXZ210N50L IXZ2210N50L
PDC
PDHS
PDAMB
Tc = 25°C, Derate 6.0W/°C above
25°C
Tc = 25°C
RthJC
www.DRattahSJHhSeet4U.com
470
235
10
0.32
0.57
VDSS
VGS(th)
IGSS
IDSS
VGS = 0 V, ID = 4 ma
VDS = VGS, ID = 250µΑ
VGS = ±20 VDC, VDS = 0
VDS = 0.8VDSS
VGS=0
TJ = 25C
TJ =125C
min.
500
3.5
RDS(on)
VGS = 20 V, ID = 0.5ID25
Pulse test, t 300µS, duty cycle d 2%
940 W
470 W
10
0.16
0.29
W
C/W
C/W
typ. max.
4.95
1.0
6.5
±100
50
1
V
V
nA
µA
mA
Features
Isolated Substrate
high isolation voltage (>2500V)
excellent thermal transfer
Increased temperature and power
cycling capability
IXYS RF Low Capacitance Z-MOSTM
Process
Very low insertion inductance (<2nH)
No beryllium oxide (BeO) or other
hazardous materials
gfs
TJ
TJM
Tstg
TL
Weight
VDS = 50 V, ID = 0.5ID25, pulse test
1.6mm(0.063 in) from case for 10 s
3.8 S
-55 +175 °C
+175 °C
-55 + 175 °C
300 °C
4g
Advantages
High Performance RF Package
Easy to mount—no insulators needed
(1) Thermal specifications are for the pack-
age, not per transistor

1 page




IXZ210N50L pdf
IXZ210N50L & IXZ2210N50L
RF Power MOSFET
S-PARMATERS for Ids = 500mA and Vds = 85V
F MHz
2.00
2.56
3.12
3.68
4.24
4.80
5.36
5.92
6.48
7.04
7.60
8.16
8.72
9.28
9.84
10.40
10.96
11.52
12.08
12.64
13.20
13.76
14.32
14.88
15.44
16.00
16.56
17.12
17.68
www.DataSheet41U8.c.o2m4
18.80
19.36
19.92
20.48
21.04
21.60
22.16
22.72
23.28
23.84
24.40
24.96
25.52
26.08
26.64
27.20
27.76
28.32
28.88
29.44
30.00
mag S11 ang S11 mag S12 ang S12 mag S21 ang S21 mag S22 ang S22
1.00
0.92
0.89
0.87
0.87
0.87
0.87
0.87
0.88
0.88
0.89
0.89
0.90
0.90
0.91
0.91
0.91
0.91
0.92
0.92
0.92
0.93
0.93
0.93
0.93
0.93
0.93
0.93
0.93
0.93
0.93
0.94
0.94
0.94
0.94
0.94
0.94
0.94
0.94
0.94
0.94
0.94
0.95
0.94
0.95
0.95
0.95
0.95
0.95
0.95
0.95
-75.60
-88.14
-97.38
-105.23
-111.43
-116.93
-121.73
-125.77
-129.43
-132.51
-135.38
-137.91
-140.21
-142.15
-144.08
-145.79
-147.24
-148.71
-150.00
-151.28
-152.29
-153.33
-154.29
-155.22
-156.05
-156.02
-156.80
-157.45
-158.24
-159.00
-159.52
-160.13
-160.64
-161.22
-161.70
-162.01
-162.64
-163.02
-163.36
-163.92
-164.13
-164.61
-164.83
-165.25
-165.49
-165.87
-166.18
-166.42
-166.71
-166.89
-167.21
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
51.67
41.71
26.40
20.78
17.69
13.57
11.35
14.74
18.53
5.00
11.59
4.28
2.67
-0.50
7.28
3.08
4.92
4.59
0.05
-3.47
3.75
6.98
-1.36
7.91
6.46
4.31
3.45
3.31
7.43
-0.33
8.91
-5.90
6.68
6.33
13.23
10.44
4.32
6.04
8.23
4.67
3.79
7.04
4.29
1.02
1.65
4.26
4.00
11.55
9.83
5.47
2.61
98.32 135.58
76.78 120.80
61.88 111.89
51.39 105.98
43.57 101.80
37.75 98.72
33.33 96.32
29.65 94.63
26.68 92.99
24.33 91.67
22.32 90.53
20.59 89.62
19.14 88.81
17.89 87.97
16.77 87.74
15.74 86.98
14.91 86.27
14.13 85.96
13.37 85.37
12.74 84.86
12.20 84.42
11.65 84.06
11.15 83.58
10.75 83.43
10.32 83.03
10.32 83.01
9.95 82.75
9.60 82.30
9.26 81.97
8.98 81.69
8.71 81.27
8.41 80.91
8.18 80.48
7.96 80.17
7.74 79.82
7.51 79.49
7.33 79.06
7.14 78.83
6.97 78.51
6.80 77.96
6.62 77.61
6.48 77.41
6.34 76.89
6.20 76.63
6.06 76.12
5.95 75.63
5.82 75.23
5.68 74.90
5.58 74.44
5.47 74.11
5.35 73.63
0.83 -77.19
0.73 -90.21
0.65 -99.74
0.61 -107.26
0.57 -113.20
0.55 -118.05
0.53 -121.94
0.52 -125.82
0.51 -128.85
0.51 -131.50
0.50 -133.72
0.50 -135.79
0.50 -137.30
0.49 -138.59
0.49 -139.86
0.49 -140.96
0.49 -142.13
0.49 -143.40
0.49 -143.90
0.49 -144.57
0.49 -145.23
0.49 -145.74
0.49 -146.57
0.49 -146.58
0.50 -147.08
0.50 -147.08
0.50 -147.29
0.50 -147.77
0.50 -148.05
0.50 -148.23
0.51 -148.60
0.51 -148.70
0.51 -148.83
0.51 -149.05
0.51 -149.25
0.52 -149.55
0.52 -149.56
0.52 -149.69
0.52 -149.75
0.53 -149.91
0.53 -149.91
0.53 -150.19
0.53 -150.00
0.53 -150.21
0.54 -150.41
0.54 -150.40
0.54 -150.46
0.55 -150.43
0.55 -150.48
0.55 -150.57
0.55 -150.69

5 Page










PáginasTotal 9 Páginas
PDF Descargar[ Datasheet IXZ210N50L.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
IXZ210N50L(IXZ210N50L / IXZ2210N50L) N-Channel Enhancement Mode Linear 175MHz RF MOSFETIXYS Corporation
IXYS Corporation

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar