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PDF K3405 Data sheet ( Hoja de datos )
| Número de pieza | K3405 | |
| Descripción | MOSFET ( Transistor ) - 2SK3405 | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3405
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3405 is N-Channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
FEATURES
• 4.5-V drive available
• Low on-state resistance
RDS(on)1 = 9.0 mΩ MAX. (VGS = 10 V, ID = 24 A)
• Low gate charge
QG = 34 nC TYP. (ID = 48 A, VDD = 16 V, VGS = 10 V)
• Built-in gate protection diode
• Surface mount device available
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3405
TO-220AB
2SK3405-ZK
2SK3405-ZJ
TO-263(MP-25ZK)
TO-263(MP-25ZJ)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C )
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
VDSS
VGSS
20
±20
Drain Current (DC) (TC = 25°C)
Drain Current (Pulse) Note
www.DataTSohteael tP4Uow.ceomr Dissipation (TA = 25°C)
ID(DC)
ID(pulse)
PT1
±48
±192
1.5
Total Power Dissipation (TC = 25°C) PT2
50
Channel Temperature
Tch 150
Storage Temperature
Tstg −55 to +150
Note PW ≤ 10 µs, Duty Cycle ≤ 1%
V
V
A
A
W
W
°C
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14639EJ2V0DS00 (2nd edition) The mark # shows major revised points.
Date Published April 2001 NS CP(K)
Printed in Japan
©
1999, 2000
1 page  
2SK3405
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160
Tch - Channel Temperature - ˚C
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160
TC - Case Temperature - ˚C
# FORWARD BIAS SAFE OPERATING AREA
1000
100
10
RDS(onV) GLSim=it1e0dIDV()DC)
(@
ID(pulse)
PW
Power
100
Dissipat1io03nmm1Lssmi3m0s0iteµds
µs
= 10 µs
TC = 25˚C
1 Single Pulse
0.1
1
10
VDS - Drain to Source Voltage - V
100
1000
www.DataSheet4U.com
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(ch-A) = 83.3˚C/W
10
Rth(ch-C) = 2.5˚C/W
1
0.1
0.01
10µ
100 µ 1 m
10 m 100 m
1
PW - Pulse Width - sec
Single Pulse
10 100 1000
Data Sheet D14639EJ2V0DS
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet K3405.PDF ] | |
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