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FQB22P10TM_F085 fiches techniques PDF

Fairchild Semiconductor - 100V P-Channel MOSFET

Numéro de référence FQB22P10TM_F085
Description 100V P-Channel MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FQB22P10TM_F085 fiche technique
FQB22P10TM_F085
100V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
February 2009
QFET®
Features
• -22A, -100V, RDS(on) = 0.125@VGS = -10 V
• Low gate charge ( typical 40 nC)
• Low Crss ( typical 160 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
Qualified to AEC Q101
RoHS Compliant
DD
GS
D2-PAK
FQB Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
www.DataSheet4UID.cMom
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
Power Dissipation (TA = 25°C) *
Power Dissipation (TC = 25°C)
- Derate above 25°C
(Note 3)
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient *
RθJA
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
©2009 Fairchild Semiconductor Corporation
FQB22P10TM_F085 Rev. A
1
G
S
FQB22P10TM_F085
-100
-22
-15.6
-88
±30
710
-22
12.5
-6.0
3.75
125
0.83
-55 to +175
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Typ Max Units
-- 1.2 °C/W
-- 40 °C/W
-- 62.5 °C/W
www.fairchildsemi.com

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