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PDF FGA30N120FTD Data sheet ( Hoja de datos )
| Número de pieza | FGA30N120FTD | |
| Descripción | Trench IGBT | |
| Fabricantes | Fairchild Semiconductor | |
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April 2013
FGA30N120FTD
1200 V, 30 A Field Stop Trench IGBT
Features
• Field Stop Trench Technology
• High Speed Switching
• Low Saturation Voltage: VCE(sat) = 1.6 V @ IC = 30 A
• High Input Impedance
Applications
• Solar Inverter, UPS, Welder, PFC
General Description
Using advanced field stop trench technology, Fairchild®’s
1200V trench IGBTs offer superior conduction and switching
performances for soft switching applications. The device can
operate in parallel configuration with exceptional avalanche rug-
gedness. This device is designed for induction heating and
microwave oven.
C
GCE
TO-3P
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(Diode)
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
©2009 Fairchild Semiconductor Corporation
FGH30N120FTD Rev. C0
1
G
E
Ratings
1200
± 25
60
30
90
30
339
132
-55 to +150
-55 to +150
300
Unit
V
V
A
A
A
A
W
W
oC
oC
oC
Typ.
-
-
Max.
0.38
1.2
Unit
oC/W
oC/W
www.fairchildsemi.com
1 page  
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
Common Emitter
TC = 125oC
16
12
8
4 60A
30A
IC = 15A
0
0 4 8 12 16 20
Gate-Emitter Voltage, VGE [V]
Figure 9. Gate charge Characteristics
15
Common Emitter
TC = 25oC
12
VCC = 200V
9
600V
400V
6
3
0
0 50 100 150 200 250
Gate Charge, Qg [nC]
Figure 11. Turn-on Characteristics vs.
Gate Resistance
500
100
tr
10
0
td(on)
Common Emitter
VCC = 600V, VGE = 15V
IC = 30A
TC = 25oC
TC = 125oC
20 40 60 80
Gate Resistance, RG [Ω]
100
Figure 8. Capacitance Characteristics
8000
6000
Common Emitter
Cies
VGE = 0V, f = 1MHz
TC = 25oC
4000
2000
Coes
Cres
0
1 10
Collector-Emitter Voltage, VCE [V]
30
Figure 10. SOA Characteristics
200
100
10μs
100μs
10 1ms
10 ms
DC
1
0.1
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
0.01
1 10 100 1000
Collector-Emitter Voltage, VCE [V]
3000
Figure 12. Turn-off Characteristics vs.
Gate Resistance
2000
1000
td(off)
100
50
0
tf
Common Emitter
VCC = 600V, VGE = 15V
IC = 30A
TC = 25oC
TC = 125oC
20 40 60 80
Gate Resistance, RG [Ω]
100
©2009 Fairchild Semiconductor Corporation
FGH30N120FTD Rev. C0
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet FGA30N120FTD.PDF ] | |
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