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PDF FDS8672S Data sheet ( Hoja de datos )
| Número de pieza | FDS8672S | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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December 2007
FDS8672S
N-Channel PowerTrench® SyncFET™
30V, 18A, 4.8mΩ
tm
Features
Max rDS(on) = 4.8mΩ at VGS = 10V, ID = 18A
Max rDS(on) = 7.0mΩ at VGS = 4.5V, ID = 15A
Includes SyncFET Schottky body diode
High performance trench technology for extremely low rDS(on)
and fast switching
High power and current handling capability
100% Rg (Gate Resistance) tested
Termination is Lead-free and RoHS Compliant
General Description
The FDS8672S is designed to replace a single MOSFET and
Schottky diode in synchronous DC/DC power supplies. This 30V
MOSFET is designed to maximize power conversion efficiency,
providing a low rDS(on) and low gate charge. The FDS8672S
includes a patented combination of a MOSFET monolithically
integrated with a Schottky diode using Fairchild’s monolithic
SyncFET technology.
Application
Synchronous Rectifier for DC/DC Converters
Notebook Vcore low side switch
Point of load low side switch
D
D
D
D
SO-8
Pin 1
G
S
S
S
D5
D6
D7
D8
4G
3S
2S
1S
www.DataShMeeOt4US.cFoEmT Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
TA = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 3)
(Note 1a)
(Note 1b)
Ratings
30
±20
18
80
216
2.5
1.0
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
(Note 1a)
25
50
°C/W
Device Marking
FDS8672S
Device
FDS8672S
Package
SO8
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
©2007 Fairchild Semiconductor Corporation
FDS8672S Rev.D2
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25°C unless otherwise noted
2
1
0.1
0.01
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
0.001
0.0001
10-3
SINGLE PULSE
RθJA = 125oC/W
10-2
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-1 100 101 102
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
103
www.DataSheet4U.com
©2007 Fairchild Semiconductor Corporation
FDS8672S Rev.D2
5
www.fairchildsemi.com
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| PDF Descargar | [ Datasheet FDS8672S.PDF ] | |
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