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PDF FDMS7680 Data sheet ( Hoja de datos )
| Número de pieza | FDMS7680 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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FDMS7680
N-Channel PowerTrench® MOSFET
30 V, 6.9 mΩ
Features
General Description
April 2009
Max rDS(on) = 6.9 mΩ at VGS = 10 V, ID = 14 A
Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A
Advanced Package and Silicon combination for low rDS(on)
and high efficiency
Next generation enhanced body diode technology, engineered
for soft recovery.
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized
for low gate charge, low rDS(on), fast switching speed and body
diode reverse recovery performance.
Applications
MSL1 robust package design
100% UIL tested
RoHS Compliant
IMVP Vcore Switching for Notebook
VRM Vcore Switching for Desktop and Server
OringFET / Load Switch
DC-DC Conversion
Top Bottom
Pin 1
S
S
S
G
D5
D6
4G
3S
D
D
D
D
Power 56
D7
D8
2S
1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
www.DataSheet4U.com
Symbol
Parameter
VDS Drain to Source Voltage
VGS Gate to Source Voltage
Drain Current -Continuous (Package limited) TC = 25 °C
ID
-Continuous (Silicon limited)
-Continuous
TC = 25 °C
TA = 25 °C
-Pulsed
EAS
PD
TJ, TSTG
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
+/-20
28
53
14
80
29
33
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
Device Marking
FDMS7680
Device
FDMS7680
Package
Power 56
(Note 1a)
3.7
50
°C/W
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2008 Fairchild Semiconductor Corporation
FDMS7680 Rev.C
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25 °C unless otherwise noted
2
1 DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
PDM
0.01
0.001
10-4
16
SINGLE PULSE
RθJA = 125 oC/W
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (sec)
100
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
Figure 15.
12
di/dt = 300 A/µs
8
4
0
-4
0 20 40 60 80 100 120
TIME (ns)
Figure 14. Body Diode Reverse Recovery
Characteristics
www.DataSheet4U.com
1000
©2008 Fairchild Semiconductor Corporation
FDMS7680 Rev.C
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FDMS7680.PDF ] | |
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