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PDF FDMS7672AS Data sheet ( Hoja de datos )
| Número de pieza | FDMS7672AS | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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September 2009
FDMS7672AS
N-Channel PowerTrench® SyncFETTM
30 V, 42 A, 4 mΩ
Features
General Description
Max rDS(on) = 4.0 mΩ at VGS = 10 V, ID = 18 A
Max rDS(on) = 4.5 mΩ at VGS = 7 V, ID = 16 A
Advanced Package and Silicon combination for low rDS(on)
and high efficiency
SyncFET Schottky Body Diode
MSL1 robust package design
The FDMS7672AS has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) while maintaining excellent switching performance. This
device has the added benefit of an efficient monolithic Schottky
body diode.
Applications
100% UIL tested
Synchronous Rectifier for DC/DC Converters
RoHS Compliant
Notebook Vcore/ GPU low side switch
Networking Point of Load low side switch
Telecom secondary side rectification
Top
Bottom
Pin 1
S D5
4G
S
SG D 6
3S
Power 56
DDDD
D7
D8
2S
1S
MOSFET
www.DataSheet4U.com
Maximum
Ratings
TA
=
25
°C
unless
otherwise
noted
Symbol
VDS
VGS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
dv/dt
MOSFET dv/dt
EAS
PD
TJ, TSTG
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
±20
42
83
19
90
2.6
60
46
2.5
-55 to +150
Units
V
V
A
V/ns
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
2.7
50
°C/W
Device Marking
FDMS7672AS
Device
FDMS7672AS
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2009 Fairchild Semiconductor Corporation
FDMS7672AS Rev.C
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25 °C unless otherwise noted
2
1
0.1
0.01
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
0.001
0.0001
10-4
SINGLE PULSE
RθJA = 125 oC/W
10-3
10-2
10-1 1
t, RECTANGULAR PULSE DURATION (sec)
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10 100
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
1000
www.DataSheet4U.com
FDMS7672AS Rev.C
5 www.fairchildsemi.com
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