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PDF FDMF6704 Data sheet ( Hoja de datos )
| Número de pieza | FDMF6704 | |
| Descripción | High Frequency DrMOS Module | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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September 2008
FDMF6704 - XSTM DrMOS
The Xtra Small High Performance, High Frequency DrMOS Module tm
Benefits
Ultra compact size - 6 mm x 6 mm MLP, 44 % space
saving compared to conventional MLP 8 mm x 8 mm
DrMOS packages.
Fully optimized system efficiency.
Clean voltage waveforms with reduced ringing.
High frequency operation.
Compatible with a wide variety of PWM controllers in the
market.
Features
Ultra- compact thermally enhanced 6 mm x 6 mm MLP
package 84 % smaller than conventional discrete solutions.
Synchronous driver plus FET multichip module.
High current handling of 35 A.
Over 93 % peak efficiency.
Tri-State PWM input.
Fairchild's PowerTrench® 5 technology MOSFETs for clean
voltage waveforms and reduced ringing.
Optimized for high switching frequencies of up to 1 MHz.
Skip mode SMOD [low side gate turn off] input.
Fairchild SyncFETTM [integrated Schottky diode] technology
in the low side MOSFET.
Integrated bootstrap Schottky diode.
Adaptive gate drive timing for shoot-through protection.
Driver output disable function [DISB# pin].
Undervoltage lockout (UVLO).
Fairchild Green Packaging and RoHS
www.DataSheetc4oUm.cpolimant. Low profile SMD package.
Power Train Application Circuit
General Description
The XSTM DrMOS family is Fairchild’s next-generation fully-
optimized ultra-compact integrated MOSFET plus driver power
stage solution for high current, high frequency synchronous
buck DC-DC applications. The FDMF6704 DrMOS integrates a
driver IC, two power MOSFETs and a bootstrap Schottky diode
into a thermally enhanced compact 6 mm x 6 mm MLP
package. With an integrated approach, the complete switching
power stage is optimized with regards to driver and MOSFET
dynamic performance, system inductance and RDS(ON). This
greatly reduces the package parasitics and layout challenges
associated with conventional discrete solutions. The driver IC
incorporates advanced features such as SMOD. PWM input is
Tri-State compatible. A 5 V gate drive and an improved PCB
interface [Low Side MOSFET exposed pad] ensure higher
performance. This product is compatible with the new Intel
6 mm x 6 mm DrMOS specification.
Applications
Compact blade servers V-core, non V-core and VTT DC-DC
converters.
Desktop computers V-core, non V-core and VTT DC-DC
converters.
Workstations V-core, non V-core and VTT DC-DC
converters.
Gaming Motherboards V-core, non V-core and VTT DC-DC
converters.
Gaming consoles.
High-current DC-DC Point of Load (POL) converters.
Networking and telecom microprocessor voltage regulators.
5V
CVDRV
CVCIN
DISB#
PWM Input
OFF
ON
VDRV VCIN
DISB#
VIN
BOOT
PWM
SMOD#
PHASE
VSWH
CGND PGND
12 V
CVIN
CBOOT
OUTPUT
COUT
Ordering Information
Figure 1. Power Train Application Circuit
Part
FDMF6704
Current Rating @ 350 kHz
[A]
35
Input Voltage Typical
[V]
8-14
Frequency Max
[kHz]
1000
©2008 Fairchild Semiconductor Corporation
FDMF6704 Rev.D
1
Device
Marking
FDMF6704
www.fairchildsemi.com
1 page  
Description of Operation
Circuit Description
The FDMF6704 is a driver plus FET module optimized for
synchronous buck converter topology. A single PWM input
signal is all that is required to properly drive the high-side and
the low-side MOSFETs. Each part is capable of driving speeds
up to 1 MHz.
PWM
When the PWM input goes high, the high side MOSFET turns
on. When it goes low, the low side MOSFET turns on. When it is
open, both the low side and high side MOFET will turn off.
The DISB# input is combined with the PWM signal to control the
driver output. In a typical multiphase design, DISB# will be a
shared signal used to turn on all phases. The individual PWM
signals from the controller will be used to dynamically enable or
disable individual phases.
Low-Side Driver
The low-side driver (LDRV) is designed to drive a ground
referenced low RDS(ON) N-channel MOSFET. The bias for LDRV
is internally connected between VDRV and CGND. When the
driver is enabled, the driver's output is 180° out of phase with
the PWM input. When the driver is disabled (DISB# = 0 V),
LDRV is held low.
High-Side Driver
The high-side driver (HDRV) is designed to drive a floating
N-channel MOSFET. The bias voltage for the high-side driver is
developed by a bootstrap supply circuit, consisting of the
internal diode and external bootstrap capacitor (CBOOT). During
start-up, VSWH is held at PGND, allowing CBOOT to charge to
VDRV through the internal diode. When the PWM input goes
high, HDRV will begin to charge the high-side MOSFET's gate
(Q1). During this transition, charge is removed from CBOOT and
delivered to Q1's gate. As Q1 turns on, VSWH rises to VIN,
forcing the BOOT pin to VIN +VC(BOOT), which provides
www.DataShseufefitc4iUen.ctoVmGS enhancement for Q1. To complete the switching
cycle, Q1 is turned off by pulling HDRV to VSWH. CBOOT is then
recharged to VDRV when VSWH falls to PGND. HDRV output is
in phase with the PWM input. When the driver is disabled, the
high-side gate is held low.
SMOD
The SMOD (Skip Mode) function allows for higher converter
efficiency under light load conditions. During SMOD, the LS
FET is disabled and it prevents discharging of output caps.
When the SMOD# pin is pulled high, the sync buck converter
will work in synchronous mode. When the SMOD# pin is pulled
low, the LS FET is turned off. The SMOD function does not have
internal current sensing. This SMOD# pin is connected to a
PWM controller which enables or disables the SMOD
automatically when the controller detects light load condition.
Normally this pin is Active Low.
Adaptive Gate Drive Circuit
The driver IC embodies an advanced design that ensures
minimum MOSFET dead-time while eliminating potential
shoot-through (cross-conduction) currents. It senses the state of
the MOSFETs and adjusts the gate drive, adaptively, to ensure
they do not conduct simultaneously. Refer to Figure 4 for the
relevant timing waveforms.
To prevent overlap during the low-to-high switching transition
(Q2 OFF to Q1 ON), the adaptive circuitry monitors the voltage
at the LDRV pin. When the PWM signal goes HIGH, Q2 will
begin to turn OFF after some propagation delay (tPDLL). Once
the LDRV pin is discharged below 1 V, Q1 begins to turn ON
after adaptive delay tDTHH.
To preclude overlap during the high-to-low transition (Q1 OFF to
Q2 ON), the adaptive circuitry monitors the voltage at the
VSWH pin. When the PWM signal goes LOW, Q1 will begin to
turn OFF after some propagation delay (tPDHL). Once the
VSWH pin falls below 1 V, Q2 begins to turn ON after adaptive
delay tDTLH.
Additionally, VGS of Q1 is monitored. When VGS(Q1) is
discharged low, a secondary adaptive delay is initiated, which
results in Q2 being driven ON after 250 ns, regardless of VSWH
state. This function is implemented to ensure CBOOT is
recharged each switching cycle, particularly for cases where the
power convertor is sinking current and VSWH voltage does not
fall below the 1 V adaptive threshold. The 250 ns secondary
delay is longer than tDTLH.
FDMF6704 Rev. D
5 www.fairchildsemi.com
5 Page 
MMeoadsuuleremPeonwtearndLCosaslcualantdionEfficiency
Refer to Figure 22 for module power loss testing method. Power
loss calculation are as follows:
(a) PIN
= (VIN x IIN) + (V5V x I5V) (W)
(b) POUT = VO x IOUT (W)
(c) PLOSS = PIN - POUT (W)
(d) Efficiency = 100 x POUT/PIN (%)
PCB Layout Guideline
Figure 23 shows a proper layout example of FDMF6704 and
critical parts. All of high current flow path, such as VIN, VSWH,
VOUT and GND copper, should be short and wide for better and
stable current flow, heat radiation and system performance.
Following is a guideline which the PCB designer should
consider:
1. Input bypass capacitors should be close to VIN and PGND pin
of FDMF6704 to help reduce input current ripple component
induced by switching operation.
2. It is critical that the VSWH copper has minimum area for
lower switching noise emission. VSWH copper trace should
also be wide enough for high current flow. Other signal routing
path, such as PWM IN and BOOT signal, should be considered
with care to avoid noise pickup from VSWH copper area.
3. Output inductor location should be as close as possible to the
FDMF6704 for lower power loss due to copper trace.
4. The PowerTrench® 5 MOSFETs used in the output stage are
very effective at minimizing ringing. In most cases, no snubber
will be required. If a snubber is used, it should be placed near
the FDMF6704. The resistor and capacitor need to be of proper
size for power dissipation.
5. Place ceramic bypass capacitor and boot capacitor as close
to VCIN and BOOT pin of FDMF6704 in order to supply stable
power. Routing width and length should also be considered.
6. Ringing at the Boot pin is most effectively controlled by close
placement of the capacitor. Do not add an additional Boot to
PGND capacitor. This may lead to excess current flow through
the Boot diode.
7. Use multiple Vias on each copper area to interconnect each
top, inner and bottom layer to help smooth current flow and heat
conduction. Vias should be relatively large and of reasonable
inductance.
V5V A I5V
CVDRV
CVCIN
DISB#
PWM Input
SMOD#
VDRV VCIN
DISB#
VIN
BOOT
PWM
SMOD#
PHASE
VSWH
CGND PGND
www.DataSheet4U.com
IIN A
CVIN
VIN
CBOOT
V VO
IOUT A
COUT
VOUT
Figure 22. Power Loss Measurement Block Diagram
FDMF6704 Rev. D
Figure 23. Typical PCB Layout Example (Top View)
11
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11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet FDMF6704.PDF ] | |
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