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PDF FDMC8200 Data sheet ( Hoja de datos )
| Número de pieza | FDMC8200 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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FDMC8200
June 2009
Dual N-Channel PowerTrench® MOSFET
30 V, 9.5 mΩ and 20 mΩ
Features
General Description
Q1: N-Channel
Max rDS(on) = 20 mΩ at VGS = 10 V, ID = 6 A
Max rDS(on) = 32 mΩ at VGS = 4.5 V, ID = 5 A
Q2: N-Channel
Max rDS(on) = 9.5 mΩ at VGS = 10 V, ID = 9 A
Max rDS(on) = 13.5 mΩ at VGS = 4.5 V, ID = 7 A
RoHS Compliant
This device includes two specialized N-Channel MOSFETs in a
dual Power33 (3mm x 3mm MLP) package. The switch node
has been internally connected to enable easy placement and
routing of synchronous buck converters. The control
MOSFET (Q1) and synchronous MOSFET (Q2) have been
designed to provide optimal power efficiency.
Applications
Mobile Computing
Mobile Internet Devices
General Purpose Point of Load
Pin 1
D1
D1
D1
G1
D1
D2/S1
S2
S2
S2
G2
VIN
VIN VIN
GHS
VIN
SWITCH
NODE
GND GND GND
GLS
S2 5
S2 6
S2 7
G2 8
Q2
Q1
BOTTOM
BOTTOM
Power 33
www.DataSheet4U.com
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current - Continuous (Package limited)
- Continuous (Silicon limited)
- Continuous
- Pulsed
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 3)
TC = 25 °C
TC = 25 °C
TA = 25 °C
TA = 25 °C
TA = 25 °C
Q1 Q2
30 30
±20 ±20
18 18
23 45
8 1a 12 1b
40
1.9 1a
0.7 1c
40
2.2 1b
0.9 1d
-55 to +150
RθJA
RθJA
RθJC
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Package Marking and Ordering Information
65 1a
180 1c
7.5
55 1b
145 1d
4
4 D1
3 D1
2 D1
1 G1
Units
V
V
A
W
°C
°C/W
Device Marking
FDMC8200
Device
FDMC8200
Package
Power 33
Reel Size
13 ”
Tape Width
12 mm
Quantity
3000 units
©2009 Fairchild Semiconductor Corporation
FDMC8200 Rev.A1
1
www.fairchildsemi.com
1 page  
Typical Characteristics (Q1 N-Channel) TJ = 25 °C unless otherwise noted
10
ID = 6 A
8
VDD = 15 V
6
VDD = 10 V
4
VDD = 20 V
2
0
02468
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
1000
100
Ciss
Coss
Crss
f = 1 MHz
VGS = 0 V
10
0.1
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure8. CapacitancevsDrain
to Source Voltage
100
10 100 us
1
THIS AREA IS
0.1 LIMITED BY rDS(on)
SINGLE PULSE
0.01
TJ = MAX RATED
RθJA = 180 oC/W
TC = 25 oC
0.001
0.01
0.1
1
1 ms
10 ms
100 ms
1s
10 s
DC
10 100200
VDS, DRAIN to SOURCE VOLTAGE (V)
www.DataSheet4U.com Figure 9. Forward Bias Safe
Operating Area
25
20
15
Limited by Package
10
5
RθJC = 7.5 oC/W
VGS = 10 V
VGS = 4.5 V
0
25 50 75 100 125 150
Tc, CASE TEMPERATURE (oC)
Figure 10. Maximum Continuous Drain Current
vs Case Temperature
300
100
VGS = 10 V
SINGLE PULSE
RθJA = 180 oC/W
TA = 25 oC
10
1
0.5
10-4
10-3
10-2
10-1
1
t, PULSE WIDTH (s)
10
Figure 11. Single Pulse Maximum Power Dissipation
©2009 Fairchild Semiconductor Corporation
FDMC8200 Rev.A1
5
100 1000
www.fairchildsemi.com
5 Page 
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
EfficentMax™
EZSWITCH™ *
™*
®
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FETBench™
FlashWriter® *
FPS™
F-PFS™
FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC®
OPTOPLANAR®
®
tm
PDP SPM™
Power-SPM™
PowerTrench®
PowerXS™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
™
Saving our world, 1mW /W /kW at a time™
SmartMax™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Sync-Lock™
®*
The Power Franchise®
®
tm
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
TRUECURRENT™*
µSerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
www.DataSheeint4stUru.cctoiomns for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
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warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Obsolete
Full Production
Not In Production
©2009 Fairchild Semiconductor Corporation
FDMC8200 Rev.A1
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I40
11 www.fairchildsemi.com
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet FDMC8200.PDF ] | |
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