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PDF FDMC7672 Data sheet ( Hoja de datos )

Número de pieza FDMC7672
Descripción N-Channel Power Trench MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FDMC7672 Hoja de datos, Descripción, Manual

June 2014
FDMC7672
N-Channel Power Trench® MOSFET
30 V, 16.9 A, 5.7 mΩ
Features
General Description
„ Max rDS(on) = 5.7 mΩ at VGS = 10 V, ID = 16.9 A
„ Max rDS(on) = 7.0 mΩ at VGS = 4.5 V, ID = 15.0 A
„ High performance technology for extremely low rDS(on)
„ Termination is Lead-free and RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance. This
device is well suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.
Application
„ DC - DC Buck Converters
„ Notebook battery power management
„ Load switch in Notebook
Top Bottom
Pin 1
SS S
G
MLP 3.3x3.3
D
D
D
D
S
S
S
G
D
D
D
D
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
±20
20
16.9
50
144
33
2.3
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
3.7
53
°C/W
Device Marking
FDMC7672
Device
FDMC7672
Package
MLP 3.3x3.3
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2010 Fairchild Semiconductor Corporation
FDMC7672 Rev.C5
1
www.fairchildsemi.com

1 page




FDMC7672 pdf
Typical Characteristics TJ = 25 °C unless otherwise noted
2
1
0.1
0.01
0.001
0.0005
10-4
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
SINGLE PULSE
RθJA = 125 oC/W
10-3
10-2
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-1 1
t, RECTANGULAR PULSE DURATION (sec)
10
100
Figure 13. Transient Thermal Response Curve
1000
©2010 Fairchild Semiconductor Corporation
FDMC7672 Rev.C5
5
www.fairchildsemi.com

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