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PDF FDMC7664 Data sheet ( Hoja de datos )

Número de pieza FDMC7664
Descripción N-Channel MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FDMC7664 Hoja de datos, Descripción, Manual

FDMC7664
N-Channel PowerTrench® MOSFET
30 V, 18.8 A, 4.2 m:
July 2009
Features
General Description
„ Max rDS(on) = 4.2 m: at VGS = 10 V, ID = 18.8 A
„ Max rDS(on) = 5.5 m: at VGS = 4.5 V, ID = 16.1 A
„ High performance technology for extremely low rDS(on)
„ Termination is Lead-free and RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance. This
device is well suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.
Applications
„ DC - DC Buck Converters
„ Notebook battery power management
„ Load switch in Notebook
Top Bottom
Pin 1
S SG
S
MLP 3.3x3.3
D
D
D
D
D5
D6
D7
D8
4G
3S
2S
1S
www.DataSMheOet4SUF.coEmT Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-Continuous (Package limited)
-Continuous
-Pulsed
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
±20
24
18.8
60
188
2.3
-55 to +150
Units
V
V
A
mJ
W
°C
RTJA
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
53
°C/W
Device Marking
FDMC7664
Device
FDMC7664
Package
MLP 3.3x3.3
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2009 Fairchild Semiconductor Corporation
FDMC7664 Rev.B
1
www.fairchildsemi.com

1 page




FDMC7664 pdf
Typical Characteristics TJ = 25 °C unless otherwise noted
2
1 DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
PDM
0.01
0.001
0.0005
10-4
SINGLE PULSE
RTJA = 125 oC/W
(Note 1b)
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZTJA x RTJA + TA
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (sec)
100
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
1000
www.DataSheet4U.com
©2009 Fairchild Semiconductor Corporation
FDMC7664 Rev.B
5
www.fairchildsemi.com

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