|
|
PDF FDMC6679AZ Data sheet ( Hoja de datos )
| Número de pieza | FDMC6679AZ | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de FDMC6679AZ (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
FDMC6679AZ
P-Channel PowerTrench® MOSFET
-30 V, -20 A, 10 mΩ
Features
Max rDS(on) = 10 mΩ at VGS = -10 V, ID = -11.5 A
Max rDS(on) = 18 mΩ at VGS = -4.5 V, ID = -8.5 A
HBM ESD protection level of 8 kV typical(note 3)
Extended VGSS range (-25 V) for battery applications
High performance trench technology for extremely low rDS(on)
High power and current handling capability
Termination is Lead-free and RoHS Compliant
July 2009
General Description
The FDMC6679AZ has been designed to minimize losses in
load switch applications. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) and ESD protection.
Applications
Load Switch in Notebook and Server
Notebook Battery Pack Power Management
Top Bottom
Pin 1
S SG
S
MLP 3.3x3.3
DD
D
D
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
www.DataSheetS4Uym.cbomol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
Ratings
-30
±25
-20
-51
-11.5
-32
41
2.3
-55 to +150
Units
V
V
A
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
3
53
°C/W
Device Marking
FDMC6679AZ
Device
FDMC6679AZ
Package
MLP 3.3x3.3
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2009 Fairchild Semiconductor Corporation
FDMC6679AZ Rev.D1
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25 °C unless otherwise noted
1000
VGS = -10 V
100
10
SINGLE PULSE
1 RθJA = 125 oC/W
TA = 25 oC
0.3
10-3
10-2
10-1 1
t, PULSE WIDTH (sec)
10
Figure 13. Single Pulse Maximum Power Dissipation
100
2
1 DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.1 0.02
0.01
PDM
0.01
SINGLE PULSE
RθJA = 125 oC/W
0.001
10-3
10-2
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-1 1
10
t, RECTANGULAR PULSE DURATION (sec)
100
www.DataSheet4U.com
Figure 14. Junction-to-Ambient Transient Thermal Response Curve
1000
1000
©2009 Fairchild Semiconductor Corporation
FDMC6679AZ Rev.D1
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FDMC6679AZ.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| FDMC6679AZ | N-Channel MOSFET | Fairchild Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |