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Número de pieza | FDD8647L | |
Descripción | N-Channel MOSFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FDD8647L (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! FDD8647L
N-Channel PowerTrench® MOSFET
40 V, 42 A, 9 mΩ
December 2008
Features
General Description
Max rDS(on) = 9 mΩ at VGS = 10 V, ID = 13 A
Max rDS(on) = 13 mΩ at VGS = 4.5 V, ID = 11 A
Fast Switching
This N-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench® technology to
deliver low rDS(on) and optimized BVDSS capability to offer
superior performance benefit in the application.
100% UIL tested
RoHS Compliant
Applications
Inverter
Power Supplies
D
G
S
D
DT O- P-2A5K2
(TO-252)
G
S
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
www.DataSheetS4Uym.cbomol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
40
±20
42
52
14
100
33
43
3.1
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
2.9
40
°C/W
Device Marking
FDD8647L
Device
FDD8647L
Package
D-PAK (TO-252)
Reel Size
13 ’’
Tape Width
12 mm
Quantity
2500 units
©2008 Fairchild Semiconductor Corporation
FDD8647L Rev.C
1
www.fairchildsemi.com
1 page Typical Characteristics TJ = 25 °C unless otherwise noted
2
1
0.1
0.01
0.001
10-6
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJC = 2.9 oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJc + TC
10-5
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Case Transient Thermal Response Curve
2
1 DUTY CYCLE-DESCENDING ORDER
0.1
0.01
0.001
10-4
www.DataSheet4U.com
D = 0.5
0.2
0.1
0.05
0.02
0.01
10-3
PDM
SINGLE PULSE
RθJA = 96 oC/W
(Note 1b)
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-2
10-1
1
t, RECTANGULAR PULSE DURATION (sec)
10
100
Figure 14. Junction-to-Ambient Transient Thermal Response Curve
1
1000
©2008 Fairchild Semiconductor Corporation
FDD8647L Rev.C
5
www.fairchildsemi.com
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet FDD8647L.PDF ] |
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FDD8647L | N-Channel MOSFET | Fairchild Semiconductor |
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