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Fairchild Semiconductor - N-Channel MOSFET

Numéro de référence FDD6796
Description N-Channel MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDD6796 fiche technique
FDD6796
N-Channel PowerTrench® MOSFET
25 V, 40 A, 5.7 m
Features
General Description
May 2008
„ Max rDS(on) = 5.7 mat VGS = 10 V, ID = 20 A
„ Max rDS(on) = 9.0 mat VGS = 4.5 V, ID = 15.5 A
„ 100% UIL tested
„ RoHS Compliant
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers. It has
been optimized for low gate charge, low rDS(on) and fast
switching speed.
Applications
„ Vcore DC-DC for Desktop Computers and Servers
„ VRM for Intermediate Bus Architecture
D
G
S
D
DT O- P-2A5K2
(TO-252)
G
S
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
www.DataSheetS4Uym.cbomol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
25
±20
40
69
20
100
39
42
3.7
-55 to +175
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
3.5
40
°C/W
Device Marking
FDD6796
Device
FDD6796
Package
D-PAK (TO-252)
Reel Size
13 ’’
Tape Width
12 mm
Quantity
2500 units
©2008 Fairchild Semiconductor Corporation
FDD6796 Rev.C
1
www.fairchildsemi.com

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