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PDF FDB088N08 Data sheet ( Hoja de datos )
| Número de pieza | FDB088N08 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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March 2009
FDB088N08
N-Channel PowerTrench® MOSFET
75V, 85A, 8.8mΩ
tm
Features
• RDS(on) = 7.3 mΩ ( Typ.)@ VGS = 10V, ID = 75A
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s adcanced PowerTrench process that has been espe-
cially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• DC to DC Convertors / Synchronous Rectification
DD
GS
D2-PAK
FDB Series
G
S
Absolute
www.DataSheet4U.com
Maximum
Ratings
TC =
25oC
unless
otherwise
noted*
Symbol
Parameter
FDB088N08
VDSS
VGSS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-
-
-
Continuous
Continuous
Continuous
(TC
(TC
(TC
=
=
=
25oC,
100oC,
25oC,
Silicon Limited)
Silicon Limited)
Package Limited)
75
±20
85*
60
75
IDM
EAS
dv/dt
PD
Drain Current
- Pulsed
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
(Note 1)
(Note 2)
(Note 3)
340
309
6.3
160
1.06
TJ, TSTG
Operating and Storage Temperature Range
-55 to +175
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A.
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Ratings
0.94
62.5
Units
V
V
A
A
A
A
mJ
V/ns
W
W/oC
oC
oC
Units
oC/W
©2009 Fairchild Semiconductor Corporation
FDB088N08 Rev. A
1
www.fairchildsemi.com
1 page  
Mechanical Dimensions
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FDB088N08 Rev. A
5 www.fairchildsemi.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FDB088N08.PDF ] | |
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