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FDB031N08 fiches techniques PDF

Fairchild Semiconductor - N-Channel MOSFET

Numéro de référence FDB031N08
Description N-Channel MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDB031N08 fiche technique
July 2008
FDB031N08
N-Channel PowerTrench® MOSFET
75V, 235A, 3.1m
tm
Features
• RDS(on) = 2.4m( Typ.)@ VGS = 10V, ID = 75A
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely low RDS(on)
• High power and current handling capability
• RoHS compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s adcanced PowerTrench process that has been espe-
cially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• DC to DC convertors / Synchronous Rectification
D
D
D2-PAK
G S FDB Series
G
S
www.DatMaSOheSet4FUE.cTomMaximum Ratings TC = 25oC unless otherwise noted*
Symbol
Parameter
FDB031N08
VDSS
VGSS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-
-
-
Continuous (TC = 25oC, Silicon Limited)
Continuous (TC = 100oC, Silicon Limited)
Continuous (TC = 25oC, Package Limited)
75
±20
235*
165*
120
IDM
EAS
dv/dt
PD
Drain Current
- Pulsed
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
(Note 1)
(Note 2)
(Note 3)
940
1995
5.5
375
2.5
TJ, TSTG
Operating and Storage Temperature Range
-55 to +175
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Ratings
0.4
62.5
Units
V
V
A
A
A
A
mJ
V/ns
W
W/oC
oC
oC
Units
oC/W
©2008 Fairchild Semiconductor Corporation
FDB031N08 Rev. A3
1
www.fairchildsemi.com

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