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FDA24N50F fiches techniques PDF

Fairchild Semiconductor - N-Channel MOSFET

Numéro de référence FDA24N50F
Description N-Channel MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDA24N50F fiche technique
FDA24N50F
N-Channel MOSFET
500V, 24A, 0.2
Features
• RDS(on) = 0.166( Typ.)@ VGS = 10V, ID = 12A
• Low Gate Charge ( Typ. 65nC)
• Low Crss ( Typ. 32pF)
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant
November 2008
UniFETTM
tm
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advance technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switching mode power supplies and active power factor
correction.
D
GDS
TO-3PN
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
G
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
S
Ratings
500
±30
24
14
96
1872
24
2.7
15
270
2.2
-55 to +150
300
Ratings
0.46
0.24
40
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Units
oC/W
©2007 Fairchild Semiconductor Corporation
FDA24N50F Rev. A
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/

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