|
|
Numéro de référence | IGW15T120 | ||
Description | Low Loss IGBT | ||
Fabricant | Infineon Technologies | ||
Logo | |||
1 Page
IGW15T120
^ TrenchStop Series
Low Loss IGBT in Trench and Fieldstop technology
• Approx. 1.0V reduced VCE(sat) compared to BUP313
C
• Short circuit withstand time – 10µs
• Designed for :
- Frequency Converters
G
E
- Uninterrupted Power Supply
• Trench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
P-TO-247-3-1
(TO-247AC)
Type
IGW25T120
VCE
1200V
IC
15A
VCE(sat),Tj=25°C
1.7V
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE ≤ 1200V, Tj ≤ 150°C
www.DaGtaaSthee-eet4mUi.tctoemr voltage
Short circuit withstand time1)
VGE = 15V, VCC ≤ 1200V, Tj ≤ 150°C
Power dissipation
TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Tj,max
150°C
Package
TO-247AC
Ordering Code
Q67040-S4515
Symbol
VCE
IC
ICpuls
-
VGE
tSC
Ptot
Tj
Tstg
-
Value
1200
30
15
45
45
±20
10
110
-40...+150
-55...+150
260
Unit
V
A
V
µs
W
°C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Preliminary / Rev. 1 Jul-02
|
|||
Pages | Pages 12 | ||
Télécharger | [ IGW15T120 ] |
No | Description détaillée | Fabricant |
IGW15T120 | Low Loss IGBT | Infineon Technologies |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |