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PDF FDP6N60ZU Data sheet ( Hoja de datos )
| Número de pieza | FDP6N60ZU | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FDP6N60ZU / FDPF6N60ZUT
N-Channel MOSFET, FRFET
600V, 4.5A, 2Ω
Features
• RDS(on) = 1.7Ω ( Typ.) @ VGS = 10V, ID = 2.25A
• Low gate charge ( Typ. 14.5nC)
• Low Crss ( Typ. 5pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
April 2009
UniFETTM
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
D
G
GDS
TO-220
FDP Series
GD S
TO-220F
FDPF Series
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
www.DataSVheGeStS4U.com
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
S
FDP6N60ZU FDPF6N60ZUT
600
±30
4.5 4.5*
2.7 2.7*
18 18*
150
4.5
10.5
20
105 33.8
0.85 0.27
-55 to +150
300
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
FDP6N60ZU
1.2
0.5
62.5
FDPF6N60ZUT
3.7
-
62.5
Units
oC/W
©2009 Fairchild Semiconductor Corporation
FDP6N60ZU / FDPF6N60ZUT Rev. A
1
www.fairchildsemi.com
1 page  
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
www.DataSheet4U.com
Unclamped Inductive Switching Test Circuit & Waveforms
FDP6N60ZU / FDPF6N60ZUT Rev. A
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FDP6N60ZU.PDF ] | |
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