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Nihon Inter Electronics Corporation - (PAT20012 / PAT20016) THYRISTOR MODULE

Numéro de référence PAT20012
Description (PAT20012 / PAT20016) THYRISTOR MODULE
Fabricant Nihon Inter Electronics Corporation 
Logo Nihon Inter Electronics Corporation 





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PAT20012 fiche technique
THYRISTOR MODULE
200A / 1200V to 1600V
FEATURES
* Isolated Base
* Dual Thyristors or Thyristor and Diode
Anti-Parallel Circuit
* High Surge Capability
* UL Recognized, File No. E187184
TYPICAL APPLICATIONS
* Rectified For General Use
PAT
PAH
PAT20012 PAT20016
PAH20012 PAH20016
OUTLINE DRAWING
Maximum Ratings
Parameter
Repetitive Peak Off-State Voltage
Non Repetitive Peak Off-State Voltage
Repetitive Peak Reverse Voltage
Non Repetitive Peak Reverse Voltage
Symbol
VDRM
VDSM
VRRM
VRSM
Approx Net Weight:500g
Grade
PAT/PAH20012
1200
1300
1200
1300
PAT/PAH20016
1600
1700
1600
1700
Unit
V
V
Parameter
wwAw.vDeatraaSgheeetR4Ue.ccotmified Output Current
RMS On-State Current
Surge On-State Current
I Squared t
Critical Rate of Turned-On Current
Peak Gate Power
Average Gate Power
Peak Gate Current
Peak Gate Voltage
Peak Gate Reverse Voltage
Operating JunctionTemperature Range
Storage Temperature Range
Isoration Voltage
Mounting torque
Case mounting
Terminals
Value per 1 Arm
IO(AV)
IT(RMS)
ITSM
I2t
di/dt
PGM
PG(AV)
IGM
VGM
VRGM
Tjw
Tstg
Viso
Ftor
Conditions
Max Rated
Value
50Hz Half Sine Wave condition
Tc=75°C
200
314
50 Hz Half Sine Wave,1Pulse
Non-Repetitive
4000
2msec to 10msec
80000
VD=2/3VDRM, ITM=2IO, Tj=125°C
IG=300mA, diG/dt=0.2A/µs
100
5
1
2
10
5
-40 to +125
-40 to +125
Base Plate to Terminals, AC1min
2500
M6 Screw
2.5 to 3.5
M8 Screw
9.0 to 10.0
Unit
A
A
A
A2s
A/µs
W
W
A
V
V
°C
°C
V
Nm

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PAT20012 (PAT20012 / PAT20016) THYRISTOR MODULE Nihon Inter Electronics Corporation
Nihon Inter Electronics Corporation
PAT20016 (PAT20012 / PAT20016) THYRISTOR MODULE Nihon Inter Electronics Corporation
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