|
|
PDF AGR26180EF Data sheet ( Hoja de datos )
| Número de pieza | AGR26180EF | |
| Descripción | Transistor | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de AGR26180EF (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
|
No Preview Available !
Preliminary Data Sheet
May 2004
AGR26180EF
180 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR26180EF is a high-voltage, gold-metalized,
enhancement mode, laterally diffused metal oxide
semiconductor (LDMOS) RF power transistor suit-
able for ultrahigh-frequency (UHF) applications,
including multichannel multipoint distribution service
(MMDS) for broadcasting and communications.
375D–03, STYLE 1
Figure 1. AGR26180EF Flanged Package
Features
Typical performance for MMDS systems.
f = 2600 MHz, IDQ = 1700 mA, Vds = 28 V,
adjacent channel BW = 3.84 MHz, 5 MHz offset;
alternate channel BW = 3.84 MHz, 10 MHz offset.
Typical P/A ratio of 9.8 dB at 0.01% (probability)
CCDF*:
www.DataShe—et4OUu.ctopmut power: 27 W.
— Power gain: 12.5 dB.
— Efficiency: 20%.
— ACPR: –33 dBc.
— ACLR1: –35 dBc.
— Return loss: –12 dB.
Typical pulsed P1dB, 6 µs pulse at 10% duty: 185 W.
High-reliability, gold-metalization process.
Hot carrier injection (HCI) induced bias drift of <5%
over 20 years.
Internally matched.
High gain, efficiency, and linearity.
Integrated ESD protection.
Device can withstand a 10:1 voltage standing wave
ratio (VSWR) at 28 Vdc, 2600 MHz, 180 W output
power pulsed 4 µs at 10% duty.
Large signal impedance parameters available.
*The test signal utilized is 4-channel W-CDMA Test Model 1. This
test signal provides an equivalent reference (occupied bandwidth
and waveform EPF) for the actual performance with an MMDS
waveform.
Table 1. Thermal Characteristics
Parameter
Thermal Resistance,
Junction to Case
Sym
Rı JC
Value
0.35
Unit
°C/W
Table 2. Absolute Maximum Ratings*
Parameter
Drain-source Voltage
Gate-source Voltage
Total Dissipation at
TC = 25 °C
Derate Above 25 °C
Operating Junction
Temperature
Storage Temperature
Range
Sym
VDSS
VGS
PD
Value
65
–0.5, +15
500
Unit
Vdc
Vdc
W
— 3 W/°C
TJ 200 °C
TSTG –65, +150 °C
* Stresses in excess of the absolute maximum ratings can cause
permanent damage to the device. These are absolute stress rat-
ings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adversely affect
device reliability.
Table 3. ESD Rating*
AGR26180EF
HBM
MM
CDM
Minimum (V)
500
50
1000
Class
1B
A
4
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
tdaukreinngtoalal hvoainddelinxpgo, sausrseemtobElyS, Danadntdesetleocpterircaatlioonvse.rPsAtEgreeAsrKes D(EeOviSc)es
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and
JESD22-C101A (CDM) standards.
Caution: MOS devices are susceptible to damage from elec-
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.
1 page  
Preliminary Data Sheet
AGR26180EF
May 2004
180 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics (continued)
35 0
30 Ƨ (%) -10
25 -20
IMD
20 -30
15
ACPR
-40
GPS
10 -50
5 -60
0 -70
1 10 100
POUT (W, AVERAGE)Z
Test conditions:
Two-carrier W-CDMA 3GPP, peak-to-average = 8.5 dB @ 0.01% CCDF, f1 = 2590 MHz, f2 = 2600 MHz, VDD = 28 V, IDQ = 1700 mA.
Figure 4. Power Gain, Drain Efficiency, ACPR, and IM3 vs. Output Power
30 0
www.DataSheet4U.com
25
20
15
Ƨ (%)
RL (dB)
GAIN (dB)
-8
-16
-24
10 -32
IMD
5 -40
0
2520
2550
ACP
2580
2610
MHzZ
2640
-48
2670
Test conditions:
Two-carrier W-CDMA 3GPP, peak-to-average = 8.5 dB @ 0.01% CCDF, f1 = 2590 MHz, f2 = 2600 MHz, VDD = 28 V, IDQ = 1700 mA, POUT = 27 W.
Figure 5. Power Gain, Drain Efficiency, ACPR, IM3, and IRL vs. Frequency
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet AGR26180EF.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| AGR26180EF | Transistor | TriQuint Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |