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PDF AGR26125E Data sheet ( Hoja de datos )
| Número de pieza | AGR26125E | |
| Descripción | Transistor | |
| Fabricantes | TriQuint Semiconductor | |
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AGR26125E
125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR26125E is a high-voltage, gold-metalized,
enhancement mode, laterally diffused metal oxide
semiconductor (LDMOS) RF power transistor suit-
able for ultrahigh-frequency (UHF) applications
including multichannel multipoint distribution service
(MMDS) for broadcasting and communications.
)
5B 03 STYLE 1
AGR26125EU (unflanged) AGR26125EF (flanged)
Figure 1. Available Packages
Features
Typical pulsed P1dB, 6 µs pulse at 10% duty: 125 W.
Typical performance for MMDS systems.
f = 2600 MHz, IDQ = 1300 mA, Vds = 28 V,
adjacent channel BW = 3.84 MHz, 5 MHz offset;
alternate channel BW = 3.84 MHz, 10 MHz offset.
Typical P/A ratio of 9.8 dB at 0.01% (probability)
CCDF*:
www.DataSh—eeOt4Uut.cpoumt power: 20 W
— Power gain: 11.5 dB.
— Power Added Efficiency (PAE): 19%.
— ACLR1: –35 dBc.
— ACLR2: –37 dBc.
High-reliability, gold-metalization process.
Low hot carrier injection (HCI) induced bias drift
over 20 years.
Internally matched.
High gain, efficiency, and linearity.
Integrated ESD protection.
Device can withstand a 10:1 voltage standing wave
ratio (VSWR) at 28 Vdc, 2600 MHz, 125 W contin-
uous wave (CW) output power.
Large signal impedance parameters available.
*The test signal utilized is 4-channel W-CDMA Test Model 1. This
test signal provides an equivalent reference (occupied bandwidth
and waveform EPF) for the actual performance with an MMDS
waveform.
Table 1. Thermal Characteristics
Parameter
Thermal Resistance,
Junction to Case:
AGR26125EU
AGR26125EF
Sym Value
Rı JC
Rı JC
0.5
0.5
Unit
°C/W
°C/W
Table 2. Absolute Maximum Ratings*
Parameter
Sym Value Unit
Drain-source Voltage
VDSS
65
Vdc
Gate-source Voltage
VGS –0.5, +15 Vdc
Total Dissipation at TC = 25 °C:
AGR26125EU
AGR26125EF
PD 350 W
PD 350 W
Derate Above 25 °C:
AGR26125EU
AGR26125EF
— 2.0 W/°C
— 2.0 W/°C
Operating Junction Tempera- TJ 200 °C
ture
Storage Temperature Range TSTG –65, +150 °C
* Stresses in excess of the absolute maximum ratings can cause
permanent damage to the device. These are absolute stress rat-
ings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adversely affect
device reliability.
Table 3. ESD Rating*
AGR26125E
HBM
MM
CDM
Minimum (V)
500
50
1500
Class
1B
A
4
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
tdaukreinngtoalal hvoainddelinxpgo, asussreemtobElyS, Danadntdesetleocpterircaatlioonvse.rPsAtEgreeAsrKes (DEeOvSic)es
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and
JESD22-C101A (CDM) standards.
Caution: MOS devices are susceptible to damage from elec-
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.
1 page  
AGR26125E
125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics
Z0 = 10 Ω
0.1
0.2
RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo)
0.2
f5 ZL
f1
0.4
0.6
0.8
0.3
0.4
f1
ZS
f5
10
20
50
MHz (f)
www.DataSheet4U.com
2500 (f1)
2535 (f2)
2595 (f3)
2655 (f4)
2700 (f5)
ZS Ω
(complex source impedance)
18.0 – j14.9
15.7 – j15.8
12.0 – j16.0
9.0 – j15.3
7.5 – j14.6
ZL Ω
(complex optimum load impedance)
2.5 – j3.7
2.3 – j3.5
2.1 – j3.2
1.9 – j2.9
1.7 – j2.7
GATE (2, 3)
DRAIN (6, 7)
ZS ZL
SOURCE (9)
INPUT MATCH
DUT
OUTPUT MATCH
Figure 3. Series Equivalent Input and Output Impedances
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