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PDF AGR21060E Data sheet ( Hoja de datos )
| Número de pieza | AGR21060E | |
| Descripción | Transistor | |
| Fabricantes | TriQuint Semiconductor | |
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AGR21060E
60 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR21060E is a high-voltage, gold-metalized,
enhancement-mode, laterally diffused metal oxide
semiconductor (LDMOS) RF power transistor suit-
able for wideband code division multiple access
(W-CDMA), single and multicarrier class AB wireless
base station power amplifier applications.
)
5B 03 STYLE 1
AGR21060EU (unflanged) AGR21060EF (flanged)
Figure 1. Available Packages
Features
Typical performance for two carrier 3GPP
W-CDMA systems. F1 = 2135 MHz and
F2 = 2145 MHz with 3.84 MHz channel bandwidth
(BW), adjacent channel BW = 3.84 MHz at F1 –
5 MHz and F2 + 5 MHz. Third-order distortion is
measured over 3.84 MHz BW at F1 – 10 MHz and
www.DataSheFe2t4+U.1co0mMHz. Typical P/A ratio of 8.5 dB at 0.01%
(probability) CCDF:
— Output power: 13.5 W.
— Power gain: 14.5 dB.
— Efficiency: 26%.
— IM3: –34 dBc.
— ACPR: –37 dBc.
— Return loss: –12 dB.
High-reliability gold-metalization process.
Low hot carrier injection (HCI) induced bias drift
over 20 years.
Internally matched.
High gain, efficiency, and linearity.
Integrated ESD protection.
Device can withstand a 10:1 voltage standing wave
ratio (VSWR) at 28 Vdc, 2140 MHz, 60 W continu-
ous wave (CW) output power.
Large signal impedance parameters available.
Table 1. Thermal Characteristics
Parameter
Thermal Resistance,
Junction to Case:
AGR21060EU
AGR21060EF
Sym Value
Rı JC
Rı JC
1.0
1.0
Unit
°C/W
°C/W
Table 2. Absolute Maximum Ratings*
Parameter
Sym Value Unit
Drain-source Voltage
VDSS 65 Vdc
Gate-source Voltage
VGS –0.5, 15 Vdc
Total Dissipation at TC = 25 °C:
AGR21060EU
PD 175 W
AGR21060EF
PD 175 W
Derate Above 25 °C:
AGR21060EU
AGR21060EF
— 1.0 W/°C
— 1.0 W/°C
Operating Junction Tempera- TJ 200 °C
ture
Storage Temperature Range TSTG –65, 150 °C
* Stresses in excess of the absolute maximum ratings can cause
permanent damage to the device. These are absolute stress rat-
ings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adversely affect
device reliability.
Table 3. ESD Rating*
AGR21060E
HBM
MM
CDM
Minimum (V)
500
50
1500
Class
1B
A
4
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
tdaukreinngtoalal hvoainddelinxpgo, asussreemtobElyS, Danadntdesetleocpterircaatlioonvse.rPsAtEgreeAsrKes (DEeOvSic)es
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and
JESD22-C101A (CDM) standards.
Caution: MOS devices are susceptible to damage from elec-
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.
1 page  
AGR21060E
60 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Package Dimensions
All dimensions are in inches. Tolerances are ±0.005 in. unless specified.
AGR21060EU
PINS:
1. DRAIN
2. GATE
3. SOURCE
PEAK DEVICES
AGR21060EU
XXXX
AGR21060EF
www.DataSheet4U.com
PEAK DEVICES
AGR21060EF
XXXX
PINS:
1. DRAIN
2. GATE
3. SOURCE
XXXX - 4 DIGIT TRACE CODE
5 Page | ||
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| PDF Descargar | [ Datasheet AGR21060E.PDF ] | |
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