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PDF AGR21045EF Data sheet ( Hoja de datos )
| Número de pieza | AGR21045EF | |
| Descripción | Transistor | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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Data Sheet
AGR21045EF
45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR21045EF is a high-voltage, gold-metalized,
laterally diffused metal oxide semiconductor
(LDMOS) RF power transistor suitable for wideband
code division multiple access (W-CDMA), single and
multicarrier class AB wireless base station power
amplifier applications.
Figure 1. AGR21045EF (flanged) Package
Features
Typical performance for two carrier 3GPP
W-CDMA systems. F1 = 2135 MHz and
F2 = 2145 MHz with 3.84 MHz channel BW, adja-
cent channel BW = 3.84 MHz at F1 – 5 MHz and
F2 + 5 MHz. Third-order distortion is measured
over 3.84 MHz BW at F1 – 10 MHz and
www.DataShFe2et4+U1.c0omMHz. Typical P/A ratio of 8.5 dB at 0.01%
(probability) CCDF:
— Output power: 10 W.
— Power gain: 14.5 dB.
— Efficiency: 26%.
— IM3: –33 dBc.
— ACPR: –37 dBc.
— Return loss: –12 dB.
High-reliability, gold-metalization process.
Low hot carrier injection (HCI) induced bias drift
over 20 years.
Internally matched.
High gain, efficiency, and linearity.
Integrated ESD protection.
Device can withstand a 10:1 voltage standing wave
ratio (VSWR) at 28 Vdc, 2140 MHz, 45 W continu-
ous wave (CW) output power.
Large signal impedance parameters available.
Table 1. Thermal Characteristics
Parameter
Thermal Resistance,
Junction to Case
Sym
Rı JC
Value
1.5
Unit
°C/W
Table 2. Absolute Maximum Ratings*
Parameter
Sym Value Unit
Drain-source Voltage
VDSS 65 Vdc
Gate-source Voltage
VGS –0.5, 15 Vdc
Total Dissipation at TC = 25 °C PD 117 W
Derate Above 25 °C
— 0.67 W/°C
Operating Junction Tempera- TJ 200 °C
ture
Storage Temperature Range TSTG –65, 150 °C
* Stresses in excess of the absolute maximum ratings can cause
permanent damage to the device. These are absolute stress rat-
ings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adversely affect
device reliability.
Table 3. ESD Rating*
AGR21045EF
HBM
MM
CDM
Minimum (V)
500
50
1500
Class
1B
A
4
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
dtaukreinngtoallahvoainddelinxpgo, sausrseemtobElyS, Danadntdesetleocpterircaatlioonvse.rPsAtEgreeAsrKes (DEeOvSic)es
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and
JESD22-C101A (CDM) standards.
Caution: MOS devices are susceptible to damage from elec-
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.
1 page  
Data Sheet
AGR21045EF
45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics (continued)
16.0
15.5
15.0
IDQ = 500 mA IDQ = 450 mA IDQ = 400 mA
14.5
14.0
13.5
13.0
12.5
12.0
11.5
11.0
0.10
IDQ = 350 mA
IDQ = 300
VDD = 28 Vdc
f1 = 2135 MHz
f2 = 2145 MHz
TWO-TONE
MEASUREMENT
10 MHz TONE
SPACING
1.00 10.00
OUTPUT POWER (W) PEP
Figure 4. Two-Tone Power Gain vs. Output Power and IDQ
100.00
www.DataSheet4U.com
-20.0
-25.0
-30.0
-35.0
VDD = 28 Vdc
f1 = 2135 MHz
f2 = 2145 MHz
TWO-TONE
MEASUREMENT
IDQ = 300 mA
IDQ = 350 mA
-40.0
-45.0
10 MHz TONE
SPACING
-50.0
-55.0
-60.0
-65.0
0.10
IDQ = 400 mA
IDQ = 450 mA
1.00 10.00
OUTPUT POWER (W) PEP
IDQ = 500 mA
100.00
Figure 5. IMD3 vs. Output Power and IDQ
5 Page | ||
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