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PDF AGR19125E Data sheet ( Hoja de datos )
| Número de pieza | AGR19125E | |
| Descripción | Transistor | |
| Fabricantes | TriQuint Semiconductor | |
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AGR19125E
125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Introduction
The AGR19125E is a 125 W, 28 V N-channel later-
ally diffused metal oxide semiconductor (LDMOS)
RF power field effect transistor (FET) suitable for
personal communication service (PCS)
(1930 MHz—1990 MHz), time-division multiple
access (TDMA), and single-carrier or multicarrier
class AB power amplifier applications.
AGR19125EU (unflanged) AGR19125EF (flanged)
Figure 1. Available Packages
Features
Typical 2 carrier, N-CDMA performance for
VDD = 28 V, IDQ = 1250 mA, F1 = 1958.75 MHz,
F2 = 1961.25 MHz, IS-95 (pilot, paging, sync,
traffic channels 8—13) 1.2288 MHz channel
bandwidth (BW). Adjacent channels measured
www.DataSheeotv4eUr.caom30 kHz BW at F1 – 0.885 MHz and
F2 + 0.885 MHz. Intermodulation distortion
products measured over a 1.2288 MHz BW at
F1 – 2.5 MHz and F2 + 2.5 MHz. Peak/Average
(P/A) = 9.72 dB at 0.01% probability on CCDF:
— Output power: 24 W.
— Power gain: 15 dB.
— Efficiency: 24%.
— ACPR: –48 dBc.
— IMD3: –34 dBc.
— Return loss: –10 dB.
High-reliability, gold-metalization process.
Low hot carrier injection (HCI) induced bias drift
over 20 years.
Internally matched.
High gain, efficiency, and linearity.
Integrated ESD protection.
Device can withstand a 10:1 voltage standing wave
ratio (VSWR) at 28 Vdc, 1960 MHz, 125 W contin-
uous wave (CW) output power.
Large signal impedance parameters available.
Table 1. Thermal Characteristics
Parameter
Thermal Resistance,
Junction to Case:
AGR19125EU
AGR19125EF
Sym Value
Rı JC
Rı JC
0.5
0.5
Unit
°C/W
°C/W
Table 2. Absolute Maximum Ratings*
Parameter
Sym Value Unit
Drain-source Voltage
VDSS 65
Vdc
Gate-source Voltage
VGS –0.5, +15 Vdc
Total Dissipation at TC = 25 °C:
AGR19125EU
PD 350 W
AGR19125EF
PD 350 W
Derate Above 25 °C:
AGR19125EU
AGR19125EF
— 2.0 W/°C
— 2.0 W/°C
Operating Junction Tempera- TJ 200 °C
ture
Storage Temperature Range TSTG –65, +150 °C
* Stresses in excess of the absolute maximum ratings can cause
permanent damage to the device. These are absolute stress rat-
ings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adversely affect
device reliability.
Table 3. ESD Rating*
AGR19125E
HBM
MM
CDM
Minimum (V)
500
50
1500
Class
1B
A
4
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
tdaukreinngtoalal hvaoinddelinxpgo, sausrseemtobElyS, Danadntdesetleocpterircaatlioonvse.rPAstEgreeAsrKes (DEeOvSic)es
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and
JESD22-C101A (CDM) standards.
Caution: MOS devices are susceptible to damage from elec-
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.
1 page  
AGR19125E
125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
140.0
0.0
120.0
100.0
80.0
60.0
40.0
20.0
POUT
IRL
EFFICIENCY
-5.0
-10.0
-15.0
-20.0
-25.0
0.0
0.00
1.00
TEST CONDITIONS:
VDD = 28 V, IDQ = 1250 mA, F = 1960 MHz.
2.00 3.00 4.00
PIN, INPUT POWER (W)S
5.00
Figure 4. Output Power and Efficiency vs. Input Power
-30.0
6.00
16.00
www.DataSheet4U.com 15.00
IDQ = 1250 mA
14.00
IDQ = 900 mA
13.00
IDQ = 1500 mA
12.00
1.00
TEST CONDITIONS:
VDD = 28 V, F = 1960 MHz, CW MEASUREMENT.
10.00
100.00
POUT, OUTPUT POWER (W)S
Figure 5. Power Gain vs. Output Power
1000.00
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