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Número de pieza | IRG4RC10KD | |
Descripción | INSULATED GATE BIPOLAR TRANSISTO | |
Fabricantes | International Rectifier | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRG4RC10KD (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! PD 91736A
IRG4RC10KD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Short Circuit Rated UltraFast: Optimized for
high operating frequencies >5.0 kHz , and Short
Circuit Rated to 10µs @ 125°C, VGE = 15V
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
• Industry standard TO-252AA package
C
G
E
n-channel
Short Circuit Rated
UltraFast IGBT
VCES = 600V
VCE(on) typ. = 2.39V
@VGE = 15V, IC = 5.0A
Benefits
• Latest generation 4 IGBT's offer highest power density
motor controls possible
• HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
• For hints see design tip 97003
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector CurrentQ
Clamped Inductive Load Current R
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
D-PAK
TO-252AA
Max.
600
9.0
5.0
18
18
4.0
16
10
± 20
38
15
-55 to +150
300 (0.063 in. (1.6mm) from case)
Thermal Resistance
Parameter
RθJC
RθJC
RθJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient (PCB mount)*
Weight
Typ.
–––
–––
–––
0.3 (0.01)
* When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994
www.irf.com
www.DataSheet4U.com
Max.
3.3
7.0
50
–––
Units
V
A
µs
V
W
°C
Units
°C/W
g (oz)
1
12/30/00
1 page 400 VGE = 0V, f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
300
Cies
200
100
0
1
Coes
Cres
10 100
VCE, Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
0.40
VCC = 480V
VGE = 15V
TJ = 25 °C
0.38 IC = 5.0A
0.36
0.34
0.32
0.30
0
20 40 60
RG , Gate Resistance
80
(Ω)
100
IRG4RC10KD
20
VCC = 400V
I C = 5.0A
16
12
8
4
0
0 4 8 12 16 20
QG , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
10 RG = O5h0mΩ
VGE = 15V
VCC = 480V
IC = 10A
1
IC = 5A
IC = 2.5A
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C )
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
www.DataSheet4U.com
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet IRG4RC10KD.PDF ] |
Número de pieza | Descripción | Fabricantes |
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