|
|
Numéro de référence | IRFSL4620PBF | ||
Description | N-Channel HEXFET Power MOSFET | ||
Fabricant | International Rectifier | ||
Logo | |||
1 Page
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
PD -96203
IRFS4620PbF
IRFSL4620PbF
HEXFET® Power MOSFET
D VDSS
200V
:RDS(on) typ. 63.7m
max. 77.5m:
S ID
24A
DD
S
G
D2Pak
IRFS4620PbF
S
GD
TO-262
IRFSL4620PbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
wwPwD.D@atTaCSh=ee2t54°UC.com Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
ePeak Diode Recovery
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
dSingle Pulse Avalanche Energy
cAvalanche Current
cRepetitive Avalanche Energy
Thermal Resistance
Symbol
RθJC
RθJA
Parameter
jJunction-to-Case
iJunction-to-Ambient (PCB Mount)
www.irf.com
G
Gate
D
Drain
S
Source
Max.
24
17
100
144
0.96
± 20
54
-55 to + 175
300
113
See Fig. 14, 15, 22a, 22b,
Typ.
–––
–––
Max.
1.045
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
12/18/08
|
|||
Pages | Pages 10 | ||
Télécharger | [ IRFSL4620PBF ] |
No | Description détaillée | Fabricant |
IRFSL4620PBF | N-Channel HEXFET Power MOSFET | International Rectifier |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |