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Numéro de référence | 2SC3885 | ||
Description | Power Transistor | ||
Fabricant | Inchange Semiconductor | ||
Logo | |||
INCHANGE Semiconductor
www.DataSheet4U.com
isc Silicon NPN Power Transistor
isc Product Specification
2SC3885
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1400V (Min)
·High Switching Speed
APPLICATIONS
·Horizontal deflection output for high resolution display.
·High speed switching regulator output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
PARAMETER
i.cnCollector-Base Voltage
.iscsemCollector-Emitter Voltage
wwwEmitter-Base Voltage
VALUE UNIT
1400
V
600 V
5V
IC Collector Current- Continuous
7
A
ICM Collector Current- Peak
14 A
IBB Base Current- Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ Junction Temperature
3.5 A
50 W
150 ℃
Tstg Storage Temperature Range
-55~150
℃
isc Website:www.iscsemi.cn
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Pages | Pages 2 | ||
Télécharger | [ 2SC3885 ] |
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