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2SC3885 fiches techniques PDF

Inchange Semiconductor - Power Transistor

Numéro de référence 2SC3885
Description Power Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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2SC3885 fiche technique
INCHANGE Semiconductor
www.DataSheet4U.com
isc Silicon NPN Power Transistor
isc Product Specification
2SC3885
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1400V (Min)
·High Switching Speed
APPLICATIONS
·Horizontal deflection output for high resolution display.
·High speed switching regulator output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
VCBO
VCEO
VEBO
PARAMETER
i.cnCollector-Base Voltage
.iscsemCollector-Emitter Voltage
wwwEmitter-Base Voltage
VALUE UNIT
1400
V
600 V
5V
IC Collector Current- Continuous
7
A
ICM Collector Current- Peak
14 A
IBB Base Current- Continuous
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
3.5 A
50 W
150
Tstg Storage Temperature Range
-55~150
isc Websitewww.iscsemi.cn

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