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2SC3798 fiches techniques PDF

Inchange Semiconductor - Power Transistor

Numéro de référence 2SC3798
Description Power Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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2SC3798 fiche technique
INCHANGE Semiconductor
www.DataSheet4U.com
isc Silicon NPN Power Transistor
isc Product Specification
2SC3798
DESCRIPTION
·Collector-Base Breakdown Voltage-
: V(BR)CBO= 800V(Min.)
·Low Collector Saturation Voltage
·High Speed Switching
APPLICATIONS
·Designed for high speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25)
SYMBOL
VCBO
VCES
VCEO
PARAMETER
i.cnCollector-Base Voltage
.iscsemCollector-Emitter Voltage
wwwCollector-Emitter Voltage
VALUE UNIT
800 V
800 V
500 V
VEBO
Emitter-Base Voltage
8V
IC Collector Current-Continuous
5A
ICM Collector Current-Peak
10 A
IBB Base Current-Continuous
Collector Power Dissipation
@Ta=25
PC
Collector Power Dissipation
@TC=25
Tj Junction Temperature
3A
3
W
70
150
Tstg Storage Temperature Range
-55~150
isc Websitewww.iscsemi.cn
·

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