DataSheetWiki


2SC3462 fiches techniques PDF

Inchange Semiconductor - Power Transistor

Numéro de référence 2SC3462
Description Power Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





1 Page

No Preview Available !





2SC3462 fiche technique
INCHANGE Semiconductor
www.DataSheet4U.com
isc Silicon NPN Power Transistor
isc Product Specification
2SC3462
DESCRIPTION
·High Breakdown Voltage-
: V(BR)CBO= 1100V(Min)
·Fast Switching Speed
·Wide Area of Safe Operation
APPLICATIONS
·Designed for switching regulator Applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
VCBO
VCEO
VEBO
PARAMETER
i.cnCollector-Base Voltage
.iscsemCollector-Emitter Voltage
wwwEmitter-Base Voltage
VALUE UNIT
1100
V
800 V
7V
IC Collector Current-Continuous
4.5 A
ICM Collector Current-Peak
15 A
IBB Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
2A
100 W
150
Tstg Storage Temperature Range
-55~150
isc Websitewww.iscsemi.cn

PagesPages 2
Télécharger [ 2SC3462 ]


Fiche technique recommandé

No Description détaillée Fabricant
2SC3460 For Switching Regulators Sanyo Semicon Device
Sanyo Semicon Device
2SC3460 SILICON POWER TRANSISTOR SavantIC
SavantIC
2SC3461 NPN Triple Diffused Planar Type Silicon Transistor Sanyo Semicon Device
Sanyo Semicon Device
2SC3461 SILICON POWER TRANSISTOR SavantIC
SavantIC

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche