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PDF 2SC3356F Data sheet ( Hoja de datos )
| Número de pieza | 2SC3356F | |
| Descripción | NPN Silicon Plastic Encapsulated Transistor | |
| Fabricantes | SeCoS Halbleitertechnologie GmbH | |
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Elektronische Bauelemente
2SC3356F
NPN Silicon
Plastic Encapsulated Transistor
FEATURES
Low noise amplifier at VHF,
UHF and CATV band.
Low Noise and High Gain
High Power Gain
MARKING
R = hFE Coding
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-323
2
Emitter
Collector
3
1
Base
A
L
3
Top View
CB
12
KE
1
D
F GH
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
1.80 2.20
1.80 2.45
1.15 1.35
0.80 1.10
1.20 1.40
0.20 0.40
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.100 REF.
0.525 REF.
0.08 0.25
--
0.650 TYP.
ABSOLUTE MAXIMUM RATINGS
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Total Device Dissipation
Junction and Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
Ratings
20
12
3
0.1
200
150, -55~150
Unit
V
V
V
A
mW
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Parameter
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Transition Frequency
Collector Output Capacitance
Symbol
BVCBO
BVCEO
ICBO
IEBO
hFE*
fT
NF
Min.
20
12
-
50
-
-
Typ.
-
-
-
-
7
-
Max.
-
-
1
1
250
-
2
Unit
V
V
μA
μA
GHz
dB
Test Conditions
IC=10μA, IE=0
IC= 1mA, IB=0
VCB=10V, IE=0
VEB=1V, IC=0
VCE=10V, IC= 20mA
VCE=10V, IC= 20mA
VCE=10V, IC= 7mA, f = 1GHz
*pulse test: pulse width ≤ 350μs, Duty cycle ≤ 2%
CLASSIFICATION OF hFE
Rank
Coding
Range
Marking
Q
23
50 - 100
R23
R
24
80 - 160
R24
S
25
125 – 250
R25
http://www.SeCoSGmbH.com/
01-June-2002 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 2
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| PDF Descargar | [ Datasheet 2SC3356F.PDF ] | |
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