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2SC3353 fiches techniques PDF

Inchange Semiconductor - Power Transistor

Numéro de référence 2SC3353
Description Power Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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2SC3353 fiche technique
INCHANGE Semiconductor
www.DataSheet4U.com
isc Silicon NPN Power Transistor
isc Product Specification
2SC3353
DESCRIPTION
·Collector-Emiiter Sustaining Voltage-
: VCEO(SUS)= 500V(Min.)
·Low Collector Saturation Voltage
: VCE(sat)= 1.0V(Max.)@ IC= 3A
·High Speed Switching
APPLICATIONS
·Designed for high speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25)
i.cnSYMBOL
PARAMETER
VALUE
UNIT
.iscsemVCBO
Collector-Base Voltage
800 V
VCEO
Collector-Emitter Voltage
500 V
wwwVEBO
Emitter-Base Voltage
8V
IC Collector Current-Continuous
5A
ICM Collector Current-Peak
10 A
IBB Base Current-Continuous
Collector Power Dissipation
@Ta=25
PC
Collector Power Dissipation
@TC=25
Tj Junction Temperature
3A
2
W
40
150
Tstg Storage Temperature Range
-55~150
·
isc Websitewww.iscsemi.cn

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