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Inchange Semiconductor - Power Transistor

Numéro de référence 2SD1233
Description Power Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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2SD1233 fiche technique
INCHANGE Semiconductor
www.DataSheet4U.com
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1233
DESCRIPTION
·High DC Current Gain
: hFE= 1500(Min.)@ IC= 4A, VCE= 3V
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 100V(Min.)
APPLICATIONS
·Designed for motor drivers, printer hammer drivers, relay
drivers, voltage regulator control applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
i.cnSYMBOL
PARAMETER
VALUE
UNIT
.iscsemVCBO Collector-Base Voltage
110 V
wwwVCEO Collector-Emitter Voltage
100 V
VEBO Emitter-Base Voltage
6V
IC Collector Current-Continuous
8A
ICM Collector Current-Peak
Collector Power Dissipation
PC @TC=25
Tj Junction Temperature
12 A
70 W
150
Tstg Storage Temperature Range
-55~150
isc Websitewww.iscsemi.cn

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