DataSheetWiki


2SD1170 fiches techniques PDF

Inchange Semiconductor - Power Transistor

Numéro de référence 2SD1170
Description Power Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





1 Page

No Preview Available !





2SD1170 fiche technique
INCHANGE Semiconductor
www.DataSheet4U.com
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1170
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min)
·High DC Current Gain-
: hFE= 2000( Min.) @(IC= 3A, VCE= 2V)
·Low Collector Saturation Voltage-
: VCE(sat)= 1.5V(Max)@ (IC= 3A, IB=B 3mA)
APPLICATIONS
·Driver for solenoid,motor and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
i.cnSYMBOL
PARAMETER
VALUE UNIT
.iscsemVCBO
Collector-Base Voltage
120 V
wwwVCEO Collector-Emitter Voltage
120 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current-Continuous
6A
ICM Collector Current-Peak
10 A
IB Base Current-Continuous
Collector Power Dissipation
PC @TC=25
TJ Junction Temperature
Tstg Storage Temperature
1A
50 W
150
-55~150
isc Websitewww.iscsemi.cn

PagesPages 2
Télécharger [ 2SD1170 ]


Fiche technique recommandé

No Description détaillée Fabricant
2SD1170 Power Transistor Inchange Semiconductor
Inchange Semiconductor
2SD1171 Silicon NPN Transistor Inchange Semiconductor
Inchange Semiconductor
2SD1172 Silicon NPN Transistor Inchange Semiconductor
Inchange Semiconductor
2SD1172 (2SD1172 - 2SD1174) SI NPN TRIPLE DIFFUSED JUNCTION MESA Panasonic Semiconductor
Panasonic Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche