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Numéro de référence | 2SD1127 | ||
Description | Power Transistor | ||
Fabricant | Inchange Semiconductor | ||
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1 Page
INCHANGE Semiconductor
www.DataSheet4U.com
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1127
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 120V(Min)
·High DC Current Gain
: hFE= 1000(Min) @IC= 10A
·Low Saturation Voltage
APPLICATIONS
·Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
i.cnSYMBOL
PARAMETER
VALUE
UNIT
.iscsemVCBO
Collector-Base Voltage
120 V
wwwVCEO
Collector-Emitter Voltage
120 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current-Continuous 10 A
ICP Collector Current-Peak
Collector Power Dissipation
PC @ TC=25℃
TJ Junction Temperature
15 A
50 W
150 ℃
Tstg Storage Temperature Range
-55~150
℃
isc Website:www.iscsemi.cn
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Pages | Pages 2 | ||
Télécharger | [ 2SD1127 ] |
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