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Inchange Semiconductor - Power Transistor

Numéro de référence 2SD1127
Description Power Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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2SD1127 fiche technique
INCHANGE Semiconductor
www.DataSheet4U.com
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1127
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 120V(Min)
·High DC Current Gain
: hFE= 1000(Min) @IC= 10A
·Low Saturation Voltage
APPLICATIONS
·Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
i.cnSYMBOL
PARAMETER
VALUE
UNIT
.iscsemVCBO
Collector-Base Voltage
120 V
wwwVCEO
Collector-Emitter Voltage
120 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current-Continuous 10 A
ICP Collector Current-Peak
Collector Power Dissipation
PC @ TC=25
TJ Junction Temperature
15 A
50 W
150
Tstg Storage Temperature Range
-55~150
isc Websitewww.iscsemi.cn

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