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NEC - SWITCHING N- AND P-CHANNEL POWER MOS FET

Numéro de référence UPA1793
Description SWITCHING N- AND P-CHANNEL POWER MOS FET
Fabricant NEC 
Logo NEC 





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UPA1793 fiche technique
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1793
SWITCHING
N- AND P-CHANNEL POWER MOS FET
DESCRIPTION
The µPA1793 is N- and P-Channel MOS Field Effect Transistors
designed for Motor Drive application.
FEATURES
Low on-state resistance
N-Channel RDS(on)1 = 69 mMAX. (VGS = 4.5 V, ID = 1.5 A)
RDS(on)2 = 72 mMAX. (VGS = 4.0 V, ID = 1.5 A)
RDS(on)3 = 107 mMAX. (VGS = 2.5 V, ID = 1.0 A)
P-Channel RDS(on)1 = 115 mMAX. (VGS = –4.5 V, ID = –1.5 A)
RDS(on)2 = 120 mMAX. (VGS = –4.0 V, ID = –1.5 A)
RDS(on)3 = 190 mMAX. (VGS = –2.5 V, ID = –1.0 A)
Low input capacitance
N-Channel Ciss = 160 pF TYP.
P-Channel Ciss = 370 pF TYP.
Built-in G-S protection diode
Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
µPA1793G
Power SOP8
Gate
PACKAGE DRAWING (Unit: mm)
85
14
5.37 Max.
N-Channel 1 ; Source 1
2 ; Gate 1
7, 8 ; Drain 1
P-Channel 3 ; Source 2
4 ; Gate 2
5, 6 ; Drain 2
6.0 ±0.3
4.4
0.8
1.27 0.78 Max.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.10
EQUIVALENT CIRCUIT
Drain
Drain
Body
Diode
Gate
Body
Diode
Gate
Protection
Diode
Source
N-Channel
Gate
Protection
Diode
Source
P-Channel
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G16059EJ1V0DS00 (1st edition)
Date Published September 2002 NS CP(K)
Printed in Japan
©
2002

PagesPages 12
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