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IRF3711PBF fiches techniques PDF

International Rectifier - HEXFET Power MOSFET

Numéro de référence IRF3711PBF
Description HEXFET Power MOSFET
Fabricant International Rectifier 
Logo International Rectifier 





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IRF3711PBF fiche technique
www.DataSheet4U.com
PD- 94948
SMPS MOSFET
Applications
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l High Frequency Buck Converters for
Server Processor Power Synchronous FET
l Optimized for Synchronous Buck
Converters Including Capacitive Induced
Turn-on Immunity
l Lead-Free
VDSS
20V
IRF3711PbF
IRF3711SPbF
IRF3711LPbF
HEXFET® Power MOSFET
RDS(on) max
6.0m
ID
110A†
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.5V VGS
l Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
TO-220AB
IRF3711PbF
Symbol
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TA = 25°C
TJ , TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation…
Linear Derating Factor
Junction and Storage Temperature Range
D2Pak
TO-262
IRF3711SPbF IRF3711LPbF
Max.
20
± 20
110†
69
440
120
3.1
0.96
-55 to + 150
Units
V
V
A
W
W
W/°C
°C
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface „
Junction-to-Ambient„
Junction-to-Ambient (PCB mount)…
Typ.
–––
0.50
–––
–––
Max.
1.04
–––
62
40
Units
°C/W
Notes  through † are on page 11
www.irf.com
1
2/27/04

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