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Numéro de référence | IRF3711PBF | ||
Description | HEXFET Power MOSFET | ||
Fabricant | International Rectifier | ||
Logo | |||
1 Page
www.DataSheet4U.com
PD- 94948
SMPS MOSFET
Applications
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l High Frequency Buck Converters for
Server Processor Power Synchronous FET
l Optimized for Synchronous Buck
Converters Including Capacitive Induced
Turn-on Immunity
l Lead-Free
VDSS
20V
IRF3711PbF
IRF3711SPbF
IRF3711LPbF
HEXFET® Power MOSFET
RDS(on) max
6.0mΩ
ID
110A
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.5V VGS
l Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
TO-220AB
IRF3711PbF
Symbol
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TA = 25°C
TJ , TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Junction and Storage Temperature Range
D2Pak
TO-262
IRF3711SPbF IRF3711LPbF
Max.
20
± 20
110
69
440
120
3.1
0.96
-55 to + 150
Units
V
V
A
W
W
W/°C
°C
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB mount)
Typ.
–––
0.50
–––
–––
Max.
1.04
–––
62
40
Units
°C/W
Notes through are on page 11
www.irf.com
1
2/27/04
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Pages | Pages 12 | ||
Télécharger | [ IRF3711PBF ] |
No | Description détaillée | Fabricant |
IRF3711PBF | HEXFET Power MOSFET | International Rectifier |
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