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PDF NTD4910N Data sheet ( Hoja de datos )
| Número de pieza | NTD4910N | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTD4910Nwww.DataSheet4U.com
Power MOSFET
30 V, 37 A, Single N−Channel, DPAK/IPAK
Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These are Pb−Free Devices
Applications
• CPU Power Delivery
• DC−DC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (RqJA)
(Note 1)
TA = 25°C
TA = 100°C
VDSS
VGS
ID
30
"20
11.2
7.9
V
V
A
Power Dissipation
(RqJA) (Note 1)
Continuous Drain
C(Nuorrteen2t)(RqJA)
Power Dissipation
(RqJA) (Note 2)
Continuous Drain
C(Nuortreen1t)(RqJC)
TA = 25°C
Steady
State
TA = 25°C
TA = 100°C
TA = 25°C
TC = 25°C
TC = 100°C
PD
ID
PD
ID
2.6 W
8.2 A
5.8
1.37 W
37 A
26
Power Dissipation
(RqJC) (Note 1)
TC = 25°C
Pulsed Drain Current tp=10ms TA = 25°C
Current Limited by Package
TA = 25°C
Operating Junction and Storage Temperature
PD
IDM
IDmaxPkg
TJ, Tstg
27.3
152
60
−55 to
175
W
A
A
°C
Source Current (Body Diode)
Drain to Source dV/dt
IS
dV/dt
23 A
7.0 V/ns
Single Pulse Drain−to−Source Avalanche
EAS 25.3 mJ
Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V,
L = 0.1 mH, IL(pk) = 22.5 A, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq pad size, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
http://onsemi.com
V(BR)DSS
30 V
RDS(on) MAX
9.0 mW @ 10 V
13 mW @ 4.5 V
D
ID MAX
37 A
N−Channel
G
S
4
4
4
12
3
CASE 369AA
DPAK
(Bent Lead)
STYLE 2
1 23
1 23
CASE 369AD CASE 369D
IPAK
IPAK
(Straight Lead) (Straight Lead
DPAK)
4
Drain
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
4 Drain
Drain
2
1 Drain 3
Gate Source
1 23
Gate Drain Source
1
23
Gate Drain Source
Y = Year
WW = Work Week
4910N = Device Code
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
© Semiconductor Components Industries, LLC, 2009
June, 2009 − Rev. 0
1
Publication Order Number:
NTD4910N/D
1 page  
NTD4910N
www.DataSheet4U.com
TYPICAL CHARACTERISTICS
1600
1200
VGS = 0 V
Ciss TJ = 25°C
800
400
0
0
Coss
Crss
5 10 15 20 25
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
30
1000
100
VDD = 15 V
ID = 15 A
VGS = 10 V
10
td(off)
tf
tr
td(on)
15.0
13.5
12.0
TJ = 25°C
QT
10.5
9.0
7.5
6.0
4.5
3.0
1.5
0
0
Qgs
2
Qgd
46
VDD = 15 V
VGS = 10 V
ID = 30 A
8 10 12 14 16 18 20
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
30
VGS = 0 V
25
20
15
TJ = 125°C
10
1
1 10 100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
100
10
VGS = 10 V
Single Pulse
1 TC = 25°C
RDS(on) Limit
Thermal Limit
0.1 Package Limit
0.1 1
10 ms
100 ms
1 ms
10 ms
dc
10 100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
5
0 TJ = 25°C
0 0.2 0.4 0.6 0.8 1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
30
ID = 24 A
25
20
15
10
5
0
25 50 75 100 125 150 175
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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| PDF Descargar | [ Datasheet NTD4910N.PDF ] | |
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